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ADVANCE
512Mb: x4, x8, x16 SDRAM
SYNCHRONOUS DRAM
FEATURES
* PC100- and PC133-compliant * Fully synchronous; all signals registered on positive edge of system clock * Internal pipelined operation; column address can be changed every clock cycle * Internal banks for hiding row access/precharge * Programmable burst lengths: 1, 2, 4, 8, or full page * Auto Precharge, includes CONCURRENT AUTO PRECHARGE, and Auto Refresh Modes * Self Refresh Mode * 64ms, 8,192-cycle refresh * LVTTL-compatible inputs and outputs * Single +3.3V 0.3V power supply
MT48LC128M4A2 - 32 Meg x 4 x 4 banks MT48LC64M8A2 - 16 Meg x 8 x 4 banks MT48LC32M16A2 - 8 Meg x 16 x 4 banks
For the latest data sheet, please refer to the Micron Web site: www.micron.com/dramds
Pin Assignment (Top View) 54-Pin TSOP
x4 x8 x16
NC
x16 x8 x4
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28
NC
NC DQ0 NC NC DQ0 DQ1 NC NC NC DQ2 NC NC DQ1 DQ3
OPTIONS
* Configurations 128 Meg x 4 (32 Meg x 4 x 4 banks) 64 Meg x 8 (16 Meg x 8 x 4 banks) 32 Meg x 16 (8 Meg x 16 x 4 banks) * WRITE Recovery (tWR) tWR = "2 CLK"1 * Plastic Package - OCPL2 54-pin TSOP II (400 mil) * Timing (Cycle Time) 7.5ns @ CL = 2 (PC133) 7.5ns @ CL = 3 (PC133) * Self Refresh Standard Low power * Operating Temperature Commercial (0oC to +70oC)
MARKING
NC
NC
128M4 64M8 .com 32M16 A2 TG -7E -75 None L None
-
-
-
VDD DQ0 VDDQ DQ1 DQ2 VssQ DQ3 DQ4 VDDQ DQ5 DQ6 VssQ DQ7 VDD DQML WE# CAS# RAS# CS# BA0 BA1 A10 A0 A1 A2 A3 VDD
Vss DQ15 DQ7 VssQ DQ14 NC DQ13 DQ6 VDDQ DQ12 NC DQ11 DQ5 VssQ DQ10 NC DQ9 DQ4 VDDQ DQ8 NC Vss NC DQMH DQM CLK CKE A12 A11 A9 A8 A7 A6 A5 A4 Vss -
NC
NC DQ3
NC NC
NC DQ2
NC
DQM
-
DataShee
NOTE: The # symbol indicates signal is active LOW. A dash (-) indicates x8 and x4 pin function is same as x16 pin function.
Configuration Refresh Count 128 Meg x 4 64 Meg x 8 32 Meg x 16 32 Meg x 4 x 4 banks 16 Meg x 8 x 4 banks 8 Meg x 16 x 4 banks 8K 8K 8K 8K (A0-A12) 4 (BA0, BA1) 2K (A0-A9, A11) 8K (A0-A12) 4 (BA0, BA1) 1K (A0-A9)
Row Addressing 8K (A0-A12) Bank Addressing 4 (BA0, BA1) Column Addressing 4K (A0-A9, A11, A12)
NOTE: 1. Refer to Micron Technical Note TN-48-05. 2. Off-center parting line.
Part Number Example:
KEY TIMING PARAMETERS
SPEED GRADE -7E -75 -7E -75 CLOCK ACCESS TIME SETUP FREQUENCY CL = 2* CL = 3* TIME 143 MHz 133 MHz 133 MHz 100 MHz - - 5.4ns 6ns 5.4ns 5.4ns - - 1.5ns 1.5ns 1.5ns 1.5ns HOLD TIME 0.8ns 0.8ns 0.8ns 0.8ns
MT48LC32M16A2TG-75
512Mb SDRAM PART NUMBERS
PART NUMBER MT48LC128M4A2TG MT48LC64M8A2TG MT48LC32M16A2TG ARCHITECTURE 128 Meg x 4 64 Meg x 8 32 Meg x 16
*CL = CAS (READ) latency
.comx16 SDRAM 512Mb: x4, x8,
512MSDRAM_D.p65 - Rev. D; Pub 1/02
1
Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2000, Micron Technology, Inc.
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE FOR EVALUATION AND REFERENCE PURPOSES ONLY AND ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE. PRODUCTS ARE ONLY WARRANTED BY MICRON TO MEET MICRON'S PRODUCTION DATA SHEET SPECIFICATIONS.
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ADVANCE
512Mb: x4, x8, x16 SDRAM
GENERAL DESCRIPTION
The 512Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 536,870,912 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4's 134,217,728-bit banks is organized as 8,192 rows by 4,096 columns by 4 bits. Each of the x8's 134,217,728-bit banks is organized as 8,192 rows by 2,048 columns by 8 bits. Each of the x16's 134,217,728-bit banks is organized as 8,192 rows by 1,024 columns by 16 bits. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of an ACTIVE command, which is then followed by a READ or WRITE command. The address bits registered coincident with the ACTIVE command are used to select the bank and row to be accessed (BA0, BA1 select the bank; A0-A12 select the row). The address bits registered coincident with the READ or WRITE command are used to select the starting column location for the burst access. The SDRAM provides for programmable READ or t4U.com WRITE burst lengths of 1, 2, 4, or 8 locations, or the full
page, with a burst terminate option. An auto precharge function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst sequence. The 512Mb SDRAM uses an internal pipelined architecture to achieve high-speed operation. This architecture is compatible with the 2n rule of prefetch architectures, but it also allows the column address to be changed on every clock cycle to achieve a high-speed, fully random access. Precharging one bank while accessing one of the other three banks will hide the precharge cycles and provide seamless, high-speed, random-access operation. The 512Mb SDRAM is designed to operate at 3.3V. An auto refresh mode is provided, along with a power-saving, power-down mode. All inputs and outputs are LVTTLcompatible. SDRAMs offer substantial advances in DRAM operating performance, including the ability to synchronously burst data at a high data rate with automatic columnaddress generation, the ability to interleave between internal banks to hide precharge time and the capability to randomly change column addresses on each clock cycle during a burst access. DataShee
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512Mb: x4, x8, x16 SDRAM 512MSDRAM_D.p65 - Rev. D; Pub 1/02
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Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2000, Micron Technology, Inc.
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ADVANCE
512Mb: x4, x8, x16 SDRAM
TABLE OF CONTENTS
Functional Block Diagram - 128 Meg x 4 .................... Functional Block Diagram - 64 Meg x 8 ................... Functional Block Diagram - 32 Meg x 16 ................. Pin Descriptions ........................................................... 4 5 6 7 Burst Read/Single Write ......................................... Concurrent Auto Precharge ................................... Truth Table 2 (CKE) ..................................................... Truth Table 3 (Current State, Same Bank) ...................... Truth Table 4 (Current State, Different Bank) ................. Absolute Maximum Ratings ........................................ DC Electrical Characteristics and Operating Conditions ................................................................ IDD Specifications and Conditions .............................. Capacitance ................................................................... 24 25 27 28 30 32 32 32 33 33 36 37 38 39 40
Functional Description ............................................... 8 Initialization ............................................................ 8 Register Definition .................................................. 8 Mode Register .................................................... 8 Burst Length ................................................. 8 Burst Type .................................................... 9 CAS Latency ................................................. 10 AC Electrical Characteristics (Timing Table) ............ Operating Mode ........................................... 10 Timing Waveforms Write Burst Mode ......................................... 10 Initialize and Load Mode Register ......................... Commands .................................................................... 11 Power-Down Mode ................................................. Truth Table 1 (Commands and DQM Operation) ............ 11 Clock Suspend Mode .............................................. Command Inhibit ................................................... 12 Auto Refresh Mode ................................................. No Operation (NOP) ............................................... 12 Self Refresh Mode ................................................... Load Mode Register ................................................ 12 Reads Active ....................................................................... 12 Read - Without Auto Precharge ....................... Read ....................................................................... 12 Read - With Auto Precharge ............................. Write ....................................................................... 12 Single Read - Without Auto Precharge ............ Precharge ................................................................. 12 t4U.com Single Read - With Auto Precharge ................. Auto Precharge ........................................................ 12 Alternating Bank Read Accesses ...................... Burst Terminate ...................................................... 13 .com Read - Full-Page Burst ...................................... Auto Refresh ............................................................ 13 Read - DQM Operation .................................... Self Refresh .............................................................. 13 Writes Operation ...................................................................... 14 Write - Without Auto Precharge ...................... Bank/Row Activation .............................................. 14 Write - With Auto Precharge ............................ Reads ....................................................................... 16 Single Write - Without Auto Precharge ........... Writes ....................................................................... 21 Single Write - With Auto Precharge ................. Precharge ................................................................. 23 Alternating Bank Write Accesses ..................... Power-Down ............................................................ 23 Write - Full-Page Burst ..................................... Clock Suspend ......................................................... 24 Write - DQM Operation ....................................
41 42 43 44 DataShee 45 46 47 48 49 50 51 52 53 54
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512Mb: x4, x8, x16 SDRAM 512MSDRAM_D.p65 - Rev. D; Pub 1/02
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Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2000, Micron Technology, Inc.
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ADVANCE
512Mb: x4, x8, x16 SDRAM
FUNCTIONAL BLOCK DIAGRAM 128 Meg x 4 SDRAM
CKE CLK CS# WE# CAS# RAS# CONTROL LOGIC BANK3 BANK2 BANK1
COMMAND DECODE
MODE REGISTER
REFRESH 13 COUNTER
12 13
ROWADDRESS MUX
13
BANK0 ROWADDRESS LATCH & DECODER
8192
BANK0 MEMORY ARRAY (8,192 x 4,096 x 4)
1
1 DQM
SENSE AMPLIFIERS 4
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2 A0-A12, BA0, BA1 ADDRESS REGISTER BANK CONTROL LOGIC
8192
DATA OUTPUT REGISTER
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4 DQ0DQ3
I/O GATING DQM MASK LOGIC .com LATCH READ DATA WRITE DRIVERS 4 4096 (x4) DATA INPUT REGISTER
15
2
COLUMN DECODER COLUMNADDRESS COUNTER/ LATCH 12
12
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512Mb: x4, x8, x16 SDRAM 512MSDRAM_D.p65 - Rev. D; Pub 1/02
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ADVANCE
512Mb: x4, x8, x16 SDRAM
FUNCTIONAL BLOCK DIAGRAM 64 Meg x 8 SDRAM
CKE CLK CS# WE# CAS# RAS# CONTROL LOGIC BANK3 BANK2 BANK1
COMMAND DECODE
MODE REGISTER
REFRESH 13 COUNTER
12 13
ROWADDRESS MUX
13
BANK0 ROWADDRESS LATCH & DECODER
8192
BANK0 MEMORY ARRAY (8,192 x 2,048 x 8)
1
1 DQM
SENSE AMPLIFIERS
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2 A0-A12, BA0, BA1 ADDRESS REGISTER
8 8192
DATA OUTPUT REGISTER
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8 DQ0DQ7
I/O .comGATING DQM MASK LOGIC BANK CONTROL LOGIC READ DATA LATCH WRITE DRIVERS 8 2048 (x8) DATA INPUT REGISTER
15
2
COLUMN DECODER COLUMNADDRESS COUNTER/ LATCH 11
11
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512Mb: x4, x8, x16 SDRAM 512MSDRAM_D.p65 - Rev. D; Pub 1/02
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ADVANCE
512Mb: x4, x8, x16 SDRAM
FUNCTIONAL BLOCK DIAGRAM 32 Meg x 16 SDRAM
CKE CLK CS# WE# CAS# RAS# CONTROL LOGIC BANK3 BANK2 BANK1
COMMAND DECODE
MODE REGISTER
REFRESH 13 COUNTER
12 13
ROWADDRESS MUX
13
BANK0 ROWADDRESS LATCH & DECODER
8192
BANK0 MEMORY ARRAY (8,192 x 1,024 x 16)
2
2
DQML, DQMH
SENSE AMPLIFIERS
16
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2 BANK CONTROL LOGIC
8192
DATA OUTPUT REGISTER
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16 DQ0DQ15
I/O .comGATING DQM MASK LOGIC READ DATA LATCH WRITE DRIVERS
16 DATA INPUT REGISTER
A0-A12, BA0, BA1
15
ADDRESS REGISTER
2
1024 (x16)
COLUMN DECODER COLUMNADDRESS COUNTER/ LATCH
10
10
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512Mb: x4, x8, x16 SDRAM 512MSDRAM_D.p65 - Rev. D; Pub 1/02
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ADVANCE
512Mb: x4, x8, x16 SDRAM
PIN DESCRIPTIONS
PIN NUMBERS 38 SYMBOL CLK TYPE Input DESCRIPTION Clock: CLK is driven by the system clock. All SDRAM input signals are sampled on the positive edge of CLK. CLK also increments the internal burst counter and controls the output registers. Clock Enable: CKE activates (HIGH) and deactivates (LOW) the CLK signal. Deactivating the clock provides PRECHARGE POWER-DOWN and SELF REFRESH operation (all banks idle), ACTIVE POWER-DOWN (row active in any bank) or CLOCK SUSPEND operation (burst/access in progress). CKE is synchronous except after the device enters power-down and self refresh modes, where CKE becomes asynchronous until after exiting the same mode. The input buffers, including CLK, are disabled during power-down and self refresh modes, providing low standby power. CKE may be tied HIGH. Chip Select: CS# enables (registered LOW) and disables (registered HIGH) the command decoder. All commands are masked when CS# is registered HIGH. CS# provides for external bank selection on systems with multiple banks. CS# is considered part of the command code. Command Inputs: RAS#, CAS#, and WE# (along with CS#) define the command being entered. Input/Output Mask: DQM is an input mask signal for write accesses and an output enable signal for read accesses. Input data is masked when DQM is sampled HIGH during a WRITE cycle. The output buffers are .com placed in a High-Z state (two-clock latency) when DQM is sampled HIGH during a READ cycle. On the x4 and x8, DQML (Pin 15) is a NC and DQMH is DQM. On the x16, DQML corresponds to DQ0-DQ7 and DQMH corresponds to DQ8-DQ15. DQML and DQMH are considered same state when referenced as DQM. Bank Address Inputs: BA0 and BA1 define to which bank the ACTIVE, READ, WRITE, or PRECHARGE command is being applied. Address Inputs: A0-A12 are sampled during the ACTIVE command (rowaddress A0-A12) and READ/WRITE command (column-address A0-A9, A11, A12 [x4]; A0-A9, A11 [x8]; A0-A9 [x16]; with A10 defining auto precharge) to select one location out of the memory array in the respective bank. A10 is sampled during a PRECHARGE command to determine if all banks are to be precharged (A10 [HIGH]) or bank selected by (A10 [LOW]). The address inputs also provide the op-code during a LOAD MODE REGISTER command.
37
CKE
Input
19
CS#
Input
18, 17, 16
RAS#, CAS#, WE# x4, x8: DQM x16: DQML, DQMH
Input Input
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39 15, 39
DataShee
20, 21 23-26, 29-34, 22, 35, 36
BA0, BA1 A0-A12
Input Input
2, 4, 5, 7, 8, 10, 11, 13, 42, 44, 45, 47, 48, 50, 51, 53 2, 5, 8, 11, 44, 47, 50, 53 5, 11, 44, 50 40 3, 9, 43, 49 6, 12, 46, 52 1, 14, 27 28, 41, 54
DQ0-DQ15 DQ0-DQ7 DQ0-DQ3 NC VDDQ VSSQ VDD VSS
x16: I/O Data Input/Output: Data bus for x16 (4, 7, 10, 13, 15, 42, 45, 48, and 51 are NCs for x8; and 2, 4, 7, 8, 10, 13, 15, 42, 45, 47, 48, 51, and 53 are NCs for x4). x8: I/O Data Input/Output: Data bus for x8 (2, 8, 47, and 53 are NCs for x4). x4: I/O Data Input/Output: Data bus for x4. - No Connect: This pin should be left unconnected. Supply DQ Power: Isolated DQ power to the die for improved noise immunity. Supply DQ Ground: Isolated DQ ground to the die for improved noise immunity. Supply Power Supply: +3.3V 0.3V. Supply Ground.
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512Mb: x4, x8, x16 SDRAM 512MSDRAM_D.p65 - Rev. D; Pub 1/02
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ADVANCE
512Mb: x4, x8, x16 SDRAM
FUNCTIONAL DESCRIPTION Register Definition
In general, the 512Mb SDRAMs (32 Meg x 4 x 4 banks, MODE REGISTER 16 Meg x 8 x 4 banks, and 8 Meg x 16 x 4 banks) are quadThe Mode Register is used to define the specific mode bank DRAMs that operate at 3.3V and include a synchroof operation of the SDRAM. This definition includes the nous interface (all signals are registered on the positive selection of a burst length, a burst type, a CAS latency, an edge of the clock signal, CLK). Each of the x4's 134,217,728operating mode and a write burst mode, as shown in bit banks is organized as 8,192 rows by 4,096 columns by Figure 1. The Mode Register is programmed via the LOAD 4 bits. Each of the x8's 134,217,728-bit banks is organized MODE REGISTER command and will retain the stored as 8,192 rows by 2,048 columns by 8 bits. Each of the x16's information until it is programmed again or the device 134,217,728-bit banks is organized as 8,192 rows by 1,024 loses power. columns by 16 bits. Mode Register bits M0-M2 specify the burst length, Read and write accesses to the SDRAM are burst oriM3 specifies the type of burst (sequential or interleaved), ented; accesses start at a selected location and continue M4-M6 specify the CAS latency, M7 and M8 specify the for a programmed number of locations in a programmed operating mode, M9 specifies the write burst mode, and sequence. Accesses begin with the registration of an ACM10 and M11 are reserved for future use. Address A12 TIVE command, which is then followed by a READ or (M12) is undefined but should be driven LOW during WRITE command. The address bits registered coincident loading of the Mode Register. with the ACTIVE command are used to select the bank The Mode Register must be loaded when all banks are and row to be accessed (BA0 and BA1 select the bank, A0idle, and the controller must wait the specified time A12 select the row). The address bits (x4: A0-A9, A11, A12; before initiating the subsequent operation. Violating eix8: A0-A9, A11; x16: A0-A9) registered coincident with the ther of these requirements will result in unspecified opREAD or WRITE command are used to select the starting eration. column location for the burst access. t4U.com DataShee Prior to normal operation, the SDRAM must be initialBurst Length ized. The following sections provide detailed informaRead and write accesses to the SDRAM are burst ori.com with the burst length being programmable, as tion covering device initialization, register definition, ented, command descriptions and device operation. shown in Figure 1. The burst length determines the maximum number of column locations that can be accessed for a given READ or WRITE command. Burst lengths of 1, Initialization 2, 4 or 8 locations are available for both the sequential SDRAMs must be powered up and initialized in a and the interleaved burst types, and a full-page burst is predefined manner. Operational procedures other than available for the sequential type. The full-page burst is those specified may result in undefined operation. Once used in conjunction with the BURST TERMINATE compower is applied to VDD and VDDQ (simultaneously) and mand to generate arbitrary burst lengths. the clock is stable (stable clock is defined as a signal Reserved states should not be used, as unknown opcycling within timing constraints specified for the clock eration or incompatibility with future versions may repin), the SDRAM requires a 100s delay prior to issuing sult. any command other than a COMMAND INHIBIT or NOP. When a READ or WRITE command is issued, a block of Starting at some point during this 100s period and concolumns equal to the burst length is effectively selected. tinuing at least through the end of this period, COMAll accesses for that burst take place within this block, MAND INHIBIT or NOP commands should be applied. meaning that the burst will wrap within the block if a Once the 100s delay has been satisfied with at least boundary is reached. The block is uniquely selected by one COMMAND INHIBIT or NOP command having been A1-A9, A11, A12 (x4); A1-A9, A11 (x8); or A1-A9 (x16) when applied, a PRECHARGE command should be applied. All the burst length is set to two; by A2-A9, A11, A12 (x4); A2banks must then be precharged, thereby placing the A9, A11 (x8) or A2-A9 (x16) when the burst length is set to device in the all banks idle state. four; and by A3-A9, A11, A12 (x4); A3-A9, A11 (x8) or A3-A9 Once in the idle state, two AUTO REFRESH cycles (x16) when the burst length is set to eight. The remaining must be performed. After the AUTO REFRESH cycles are (least significant) address bit(s) is (are) used to select the complete, the SDRAM is ready for Mode Register prostarting location within the block. Full-page bursts wrap gramming. Because the Mode Register will power up in within the page if the boundary is reached. an unknown state, it should be loaded prior to applying any operational command.
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512Mb: x4, x8, x16 SDRAM
Burst Type Accesses within a given burst may be programmed to be either sequential or interleaved; this is referred to as the burst type and is selected via bit M3. The ordering of accesses within a burst is determined by the burst length, the burst type and the starting column address, as shown in Table 1.
Table 1 Burst Definition
Burst Length Starting Column Order of Accesses Within a Burst Address Type = Sequential Type = Interleaved A0 0 1 A1 A0 0 0 0 1 1 0 1 1 A2 A1 A0 0 0 0 0 0 1 0 1 0 0 1 1 1 0 0 1 0 1 1 1 0 1 1 1 0-1 1-0 0-1-2-3 1-2-3-0 2-3-0-1 3-0-1-2 0-1 1-0 0-1-2-3 1-0-3-2 2-3-0-1 3-2-1-0 0-1-2-3-4-5-6-7 1-0-3-2-5-4-7-6 2-3-0-1-6-7-4-5 3-2-1-0-7-6-5-4 4-5-6-7-0-1-2-3 5-4-7-6-1-0-3-2 6-7-4-5-2-3-0-1 7-6-5-4-3-2-1-0 Not Supported
2
A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 Address Bus
4
12 11 10 9 8 7 6 5 4 3 BT 2 1 0 Mode Register (Mx) Reserved* WB Op Mode CAS Latency Burst Length
*Should program M12, M11, M10 = "0, 0, 0" to ensure compatibility with future devices. M2 M1 M0 0 0 0 0 1 1 0 0 1 1 0 0 1 1 0 1 0 1 0 1 0 1
Burst Length M3 = 0 1 2 4 8 Reserved Reserved Reserved Full Page M3 = 1 1 2 4 8 Reserved Reserved Reserved Reserved
8
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1 1
Full Page .com (y)
M3 0 1
Burst Type Sequential Interleaved
0-1-2-3-4-5-6-7 1-2-3-4-5-6-7-0 2-3-4-5-6-7-0-1 3-4-5-6-7-0-1-2 4-5-6-7-0-1-2-3 5-6-7-0-1-2-3-4 6-7-0-1-2-3-4-5 7-0-1-2-3-4-5-6 Cn, Cn + 1, Cn + 2 n = A0-A11/9/8 Cn + 3, Cn + 4... ...Cn - 1, (location 0-y) Cn...
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M6 M5 M4 0 0 0 0 1 1 1 1 0 0 1 1 0 0 1 1 0 1 0 1 0 1 0 1
CAS Latency Reserved Reserved 2 3 Reserved Reserved Reserved Reserved
M8 0 -
M7 0 -
M6-M0 Defined -
Operating Mode Standard Operation All other states reserved
M9 0 1
Write Burst Mode Programmed Burst Length Single Location Access
Figure 1 Mode Register Definition
NOTE: 1. For full-page accesses: y = 4,096 (x4); y = 2,048 (x8); y = 1,024 (x16). 2. For a burst length of two, A1-A9, A11, A12 (x4); A1-A9, A11 (x8); or A1-A9 (x16) select the blockof-two burst; A0 selects the starting column within the block. 3. For a burst length of four, A2-A9, A11, A12 (x4); A2-A9, A11 (x8); or A2-A9 (x16) select the blockof-four burst; A0-A1 select the starting column within the block. 4. For a burst length of eight, A3-A9, A11, A12 (x4); A3-A9, A11 (x8); or A3-A9 (x16) select the blockof-eight burst; A0-A2 select the starting column within the block. 5. For a full-page burst, the full row is selected and A0-A9, A11, A12 (x4); A0-A9, A11 (x8); or A0-A9 (x16) select the starting column. 6. Whenever a boundary of the block is reached within a given sequence above, the following access wraps within the block. 7. For a burst length of one, A0-A9, A11, A12 (x4); A0-A9, A11 (x8); or A0-A9 (x16) select the unique column to be accessed, and Mode Register bit M3 is ignored.
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ADVANCE
512Mb: x4, x8, x16 SDRAM
CAS Latency The CAS latency is the delay, in clock cycles, between the registration of a READ command and the availability of the first piece of output data. The latency can be set to two or three clocks. If a READ command is registered at clock edge n, and the latency is m clocks, the data will be available by clock edge n + m. The DQs will start driving as a result of the clock edge one cycle earlier (n + m - 1), and provided that the relevant access times are met, the data will be valid by clock edge n + m. For example, assuming that the clock cycle time is such that all relevant access times are met, if a READ command is registered at T0 and the latency is programmed to two clocks, the DQs will start driving after T1 and the data will be valid by T2, as shown in Figure 2. Table 2 below indicates the operating frequencies at which each CAS latency setting can be used. Reserved states should not be used as unknown operation or incompatibility with future versions may result. Operating Mode The normal operating mode is selected by setting M7 and M8 to zero; the other combinations of values for M7 and M8 are reserved for future use and/or test modes. The programmed burst length applies to both READ and WRITE bursts. Test modes and reserved states should not be used because unknown operation or incompatibility with future versions may result. Write Burst Mode When M9 = 0, the burst length programmed via M0-M2 applies to both READ and WRITE bursts; when M9 = 1, the programmed burst length applies to READ bursts, but write accesses are single-location (nonburst) accesses.
Table 2 CAS Latency
ALLOWABLE OPERATING FREQUENCY (MHz)
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CLK COMMAND
T0
T1
T2
T3
READ
NOP tLZ
NOP tOH DOUT
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CAS LATENCY = 2 133 100
CAS LATENCY = 3 143 133
DataShee
DQ tAC CAS Latency = 2
T0 CLK COMMAND
T1
T2
T3
T4
READ
NOP
NOP tLZ
NOP tOH DOUT
DQ tAC CAS Latency = 3
DON'T CARE UNDEFINED
Figure 2 CAS Latency
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512Mb: x4, x8, x16 SDRAM
COMMANDS
Truth Table 1 provides a quick reference of available commands. This is followed by a written description of each command. Three additional Truth Tables appear following the Operation section; these tables provide current state/next state information.
TRUTH TABLE 1 - COMMANDS AND DQM OPERATION
(Note: 1) NAME (FUNCTION) COMMAND INHIBIT (NOP) NO OPERATION (NOP) ACTIVE (Select bank and activate row) READ (Select bank and column, and start READ burst) WRITE (Select bank and column, and start WRITE burst) BURST TERMINATE PRECHARGE (Deactivate row in bank or banks) AUTO REFRESH or SELF REFRESH (Enter self refresh mode) LOAD MODE REGISTER Write Enable/Output Enable Write Inhibit/Output High-Z
NOTE: 1. 2. 3. 4.
CS# RAS# CAS# WE# DQM H L L L L L L L L X H L H H H L L L X H H L L H H L L - - X H H H L L L H L - - X X X L/H8 L/H8 X X X X L H
ADDR X X Bank/Row Bank/Col Bank/Col X Code X Op-Code - -
DQs X X X X Valid Active X X X Active High-Z
NOTES
3 4 4 5 6, 7 2 8 8
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- - .com - -
5. 6. 7. 8.
CKE is HIGH for all commands shown except SELF REFRESH. A0-A11 define the op-code written to the Mode Register, and A12 should be driven LOW. A0-A12 provide row address, and BA0, BA1 determine which bank is made active. A0-A9, A11, A12 (x4); A0-A9, A11 (x8); or A0-A9 (x16) provide column address; A10 HIGH enables the auto precharge feature (nonpersistent), while A10 LOW disables the auto precharge feature; BA0, BA1 determine which bank is being read from or written to. A10 LOW: BA0, BA1 determine the bank being precharged. A10 HIGH: All banks precharged and BA0, BA1 are "Don't Care." This command is AUTO REFRESH if CKE is HIGH; SELF REFRESH if CKE is LOW. Internal refresh counter controls row addressing; all inputs and I/Os are "Don't Care" except for CKE. Activates or deactivates the DQs during WRITEs (zero-clock delay) and READs (two-clock delay).
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512Mb: x4, x8, x16 SDRAM
COMMAND INHIBIT The COMMAND INHIBIT function prevents new commands from being executed by the SDRAM, regardless of whether the CLK signal is enabled. The SDRAM is effectively deselected. Operations already in progress are not affected. NO OPERATION (NOP) The NO OPERATION (NOP) command is used to perform a NOP to an SDRAM which is selected (CS# is LOW). This prevents unwanted commands from being registered during idle or wait states. Operations already in progress are not affected. LOAD MODE REGISTER The Mode Register is loaded via inputs A0-A11 (A12 should be driven LOW.) See Mode Register heading in the Register Definition section. The LOAD MODE REGISTER command can only be issued when all banks are idle, and a subsequent executable command cannot be issued until tMRD is met. WRITE The WRITE command is used to initiate a burst write access to an active row. The value on the BA0, BA1 inputs selects the bank, and the address provided on inputs A0A9, A11, A12 (x4); A0-A9, A11 (x8); or A0-A9 (x16) selects the starting column location. The value on input A10 determines whether or not auto precharge is used. If auto precharge is selected, the row being accessed will be precharged at the end of the WRITE burst; if auto precharge is not selected, the row will remain open for subsequent accesses. Input data appearing on the DQs is written to the memory array subject to the DQM input logic level appearing coincident with the data. If a given DQM signal is registered LOW, the corresponding data will be written to memory; if the DQM signal is registered HIGH, the corresponding data inputs will be ignored, and a WRITE will not be executed to that byte/column location.
PRECHARGE The PRECHARGE command is used to deactivate the open row in a particular bank or the open row in all banks. The bank(s) will be available for a subsequent row access ACTIVE a specified time (tRP) after the PRECHARGE command is DataShee The ACTIVE command is used to open (or activate) a t4U.com row in a particular bank for a subsequent access. The issued. Input A10 determines whether one or all banks value on the BA0, BA1 inputs selects the bank, and the are to .combe precharged, and in the case where only one bank address provided on inputs A0-A12 selects the row. This is to be precharged, inputs BA0, BA1 select the bank. row remains active (or open) for accesses until a Otherwise BA0, BA1 are treated as "Don't Care." Once a PRECHARGE command is issued to that bank. A bank has been precharged, it is in the idle state and must PRECHARGE command must be issued before opening a be activated prior to any READ or WRITE commands different row in the same bank. being issued to that bank. READ The READ command is used to initiate a burst read access to an active row. The value on the BA0, BA1 inputs selects the bank, and the address provided on inputs A0A9, A11, A12 (x4); A0-A9, A11 (x8); or A0-A9 (x16) selects the starting column location. The value on input A10 determines whether or not auto precharge is used. If auto precharge is selected, the row being accessed will be precharged at the end of the READ burst; if auto precharge is not selected, the row will remain open for subsequent accesses. Read data appears on the DQs subject to the logic level on the DQM inputs two clocks earlier. If a given DQM signal was registered HIGH, the corresponding DQs will be High-Z two clocks later; if the DQM signal was registered LOW, the DQs will provide valid data. AUTO PRECHARGE Auto precharge is a feature which performs the same individual-bank PRECHARGE function described above, without requiring an explicit command. This is accomplished by using A10 to enable auto precharge in conjunction with a specific READ or WRITE command. A PRECHARGE of the bank/row that is addressed with the READ or WRITE command is automatically performed upon completion of the READ or WRITE burst, except in the full-page burst mode, where auto precharge does not apply. Auto precharge is nonpersistent in that it is either enabled or disabled for each individual READ or WRITE command. Auto precharge ensures that the precharge is initiated at the earliest valid stage within a burst. The user must not issue another command to the same bank until the precharge time (tRP) is completed. This is determined as if an explicit PRECHARGE command was issued at the earliest possible time, as described for each burst type in the Operation section of this data sheet.
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BURST TERMINATE The BURST TERMINATE command is used to truncate either fixed-length or full-page bursts. The most recently registered READ or WRITE command prior to the BURST TERMINATE command will be truncated, as shown in the Operation section of this data sheet.
SELF REFRESH The SELF REFRESH command can be used to retain data in the SDRAM, even if the rest of the system is powered down. When in the self refresh mode, the SDRAM retains data without external clocking. The SELF REFRESH command is initiated like an AUTO REFRESH command except CKE is disabled (LOW). Once the SELF AUTO REFRESH REFRESH command is registered, all the inputs to the AUTO REFRESH is used during normal operation of SDRAM become "Don't Care" with the exception of CKE, the SDRAM and is analogous to CAS#-BEFORE-RAS# which must remain LOW. (CBR) REFRESH in conventional DRAMs. This command Once self refresh mode is engaged, the SDRAM provides its own internal clocking, causing it to perform its is nonpersistent, so it must be issued each time a refresh own AUTO REFRESH cycles. The SDRAM must remain in is required. All active banks must be PRECHARGED prior self refresh mode for a minimum period equal to tRAS to issuing a AUTO REFRESH comand. The AUTO REFRESH command should not be issued until the miniand may remain in self refresh mode for an indefinite mum tRP has been met after the PRECHARGE command period beyond that. as shown in the operations section. The procedure for exiting self refresh requires a seThe addressing is generated by the internal refresh quence of commands. First, CLK must be stable (stable controller. This makes the address bits "Don't Care" clock is defined as a signal cycling within timing conduring an AUTO REFRESH command. The 512Mb SDRAM straints specified for the clock pin) prior to CKE going requires 8,192 AUTO REFRESH cycles every 64ms (tREF), back HIGH. Once CKE is HIGH, the SDRAM must have regardless of width option. Providing a distributed AUTO NOP commands issued (a minimum of two clocks) for tXSR because time is required for the completion of any REFRESH command every 7.81s will meet the refresh internal refresh in progress. t4U.com requirement and ensure that each row is refreshed. AlterDataShee natively, 8,192 AUTO REFRESH commands can be issued Upon exiting the self refresh mode, AUTO REFRESH in a burst at the minimum cycle rate (tRC), once.com every commands must be issued every 7.81s or less as both 64ms. SELF REFRESH and AUTO REFRESH utilize the row refresh counter.
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512Mb: x4, x8, x16 SDRAM
Operation
CLK
BANK/ROW ACTIVATION Before any READ or WRITE commands can be issued CKE HIGH to a bank within the SDRAM, a row in that bank must be "opened." This is accomplished via the ACTIVE comCS# mand, which selects both the bank and the row to be activated (see Figure 3). After opening a row (issuing an ACTIVE command), a RAS# READ or WRITE command may be issued to that row, subject to the tRCD specification. tRCD (MIN) should be divided by the clock period and rounded up to the next CAS# whole number to determine the earliest clock edge after the ACTIVE command on which a READ or WRITE command can be entered. For example, a tRCD specification WE# of 20ns with a 125 MHz clock (8ns period) results in 2.5 clocks, rounded to 3. This is reflected in Figure 4, which covers any case where 2 < tRCD (MIN)/tCK - 3. (The same ROW A0-A12 procedure is used to convert other specification limits ADDRESS from time units to clock cycles.) A subsequent ACTIVE command to a different row in the same bank can only be issued after the previous BANK BA0, BA1 ADDRESS active row has been "closed" (precharged). The minimum time interval between successive ACTIVE comt4U.com mands to the same bank is defined by tRC. Figure 3 A subsequent ACTIVE command to another bank can .com Activating a Specific Row be issued while the first bank is being accessed, which results in a reduction of total row-access overhead. The Specific Bank minimum time interval between successive ACTIVE commands to different banks is defined by tRRD.
DataShee
In a
T0 CLK
T1
T2
T3
T4
COMMAND
ACTIVE
NOP
NOP
READ or WRITE
tRCD
DON'T CARE
Example: Meeting
tRCD
Figure 4 (MIN) When 2 < tRCD (MIN)/tCK < 3
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READs READ bursts are initiated with a READ command, as shown in Figure 5. The starting column and bank addresses are provided with the READ command, and auto precharge is either enabled or disabled for that burst access. If auto precharge is enabled, the row being accessed is precharged at the completion of the burst. For the generic READ commands used in the following illustrations, auto precharge is disabled. During READ bursts, the valid data-out element from the starting column address will be available following the CAS latency after the READ command. Each subsequent data-out element will be valid by the next positive clock edge. Figure 6 shows general timing for each possible CAS latency setting.
CLK CKE CS# HIGH
CLK COMMAND T0 T1 T2 T3
Upon completion of a burst, assuming no other commands have been initiated, the DQs will go High-Z. A fullpage burst will continue until terminated. (At the end of the page, it will wrap to the start address and continue.) Data from any READ burst may be truncated with a subsequent READ command, and data from a fixed-length READ burst may be immediately followed by data from a READ command. In either case, a continuous flow of data can be maintained. The first data element from the new burst follows either the last element of a completed burst or the last desired data element of a longer burst that is being truncated. The new READ command should be issued x cycles before the clock edge at which the last desired data element is valid, where x equals the CAS latency minus one. This is shown in Figure 7 for CAS
READ
NOP tLZ
NOP tOH DOUT
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RAS#
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DQ tAC CAS Latency = 2
CAS#
WE#
CLK
T0
T1
T2
T3
T4
A0-A9, A11, A12: x4 A0-A9, A11: x8 A0-A9: x16 A12: x4 A11, A12: x8 A9, A11, A12: x16
COLUMN ADDRESS
COMMAND
READ
NOP
NOP tLZ
NOP tOH DOUT
DQ tAC
ENABLE AUTO PRECHARGE
A10
DISABLE AUTO PRECHARGE BANK ADDRESS
CAS Latency = 3 DON'T CARE UNDEFINED
BA0,1
Figure 5 READ Command
Figure 6 CAS Latency
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latencies of two and three; data element n + 3 is either the last of a burst of four or the last desired of a longer burst. The 512Mb SDRAM uses a pipelined architecture and therefore does not require the 2n rule associated with a prefetch architecture. A READ command can be initiated on any clock cycle following a previous READ command. Full-speed random read accesses can be performed to the same bank, as shown in Figure 8, or each subsequent READ may be performed to a different bank.
T0 CLK
T1
T2
T3
T4
T5
T6
COMMAND
READ
NOP
NOP
NOP
READ
NOP
NOP
X = 1 cycle
ADDRESS
BANK, COL n
BANK, COL b
DQ
DOUT n
DOUT n+1
DOUT n+2
DOUT n+3
DOUT b
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CAS Latency = 2
DataShee
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T0 CLK T1 T2 T3 T4 T5 T6 T7
COMMAND
READ
NOP
NOP
NOP
READ
NOP
NOP
NOP
X = 2 cycles
ADDRESS
BANK, COL n
BANK, COL b
DQ
CAS Latency = 3
DOUT n
DOUT n+1
DOUT n+2
DOUT n+3
DOUT b
NOTE: Each READ command may be to any bank. DQM is LOW.
DON'T CARE
Figure 7 Consecutive READ Bursts
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512Mb: x4, x8, x16 SDRAM
T0 CLK T1 T2 T3 T4 T5
COMMAND
READ
READ
READ
READ
NOP
NOP
ADDRESS
BANK, COL n
BANK, COL a
BANK, COL x
BANK, COL m
DQ
CAS Latency = 2
DOUT n
DOUT a
DOUT x
DOUT m
T0 CLK
T1
T2
T3
T4
T5
T6
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COMMAND
READ READ READ READ NOP NOP NOP
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ADDRESS
BANK, COL n BANK, COL a BANK, COL x BANK, COL m
DQ
CAS Latency = 3
DOUT n
DOUT a
DOUT x
DOUT m
NOTE: Each READ command may be to any bank. DQM is LOW.
DON'T CARE
Figure 8 Random READ Accesses
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Data from any READ burst may be truncated with a subsequent WRITE command, and data from a fixedlength READ burst may be immediately followed by data from a WRITE command (subject to bus turnaround limitations). The WRITE burst may be initiated on the clock edge immediately following the last (or last desired) data element from the READ burst, provided that I/ O contention can be avoided. In a given system design, there may be a possibility that the device driving the input data will go Low-Z before the SDRAM DQs go HighZ. In this case, at least a single-cycle delay should occur between the last read data and the WRITE command. The DQM input is used to avoid I/O contention, as shown in Figures 9 and 10. The DQM signal must be asserted (HIGH) at least two clocks prior to the WRITE command (DQM latency is two clocks for output buffers) to suppress data-out from the READ. Once the WRITE command is registered, the DQs will go High-Z (or remain High-Z), regardless of the state of the DQM signal; provided the DQM was active on the clock just prior to the WRITE command that truncated the READ command. If not, the second WRITE will be an invalid WRITE. For example, if DQM was LOW during T4 in Figure 10, then the WRITEs at T5 and T7 would be valid, while the WRITE at T6 would be invalid. The DQM signal must be de-asserted prior to the WRITE command (DQM latency is zero clocks for input buffers) to ensure that the written data is not masked. Figure 9 shows the case where the clock frequency allows for bus contention to be avoided without adding a NOP cycle, and Figure 10 shows the case where the additional NOP is needed.
T0 CLK DQM
T1
T2
T3
T4
CLK DQM
T0
T1
T2
T3
T4
T5
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DataShee
READ NOP NOP NOP WRITE
COMMAND ADDRESS
COMMAND
READ
NOP
NOP
NOP
NOP
WRITE
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ADDRESS
BANK, COL n BANK, COL b
BANK, COL n
BANK, COL b
tHZ DQ
DOUT n DIN b
tCK tHZ DQ
DOUT n DIN b
tDS
tDS NOTE: A CAS latency of three is used for illustration. The READ command may be to any bank, and the WRITE command may be to any bank. If a burst of one is used, then DQM is not required.
NOTE:
A CAS latency of three is used for illustration. The READ command may be to any bank, and the WRITE command may be to any bank. DON'T CARE
Figure 9 READ to WRITE
Figure 10 READ to WRITE with Extra Clock Cycle
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A fixed-length READ burst may be followed by, or truncated with, a PRECHARGE command to the same bank (provided that auto precharge was not activated), and a full-page burst may be truncated with a PRECHARGE command to the same bank. The PRECHARGE command should be issued x cycles before the clock edge at which the last desired data element is valid, where x equals the CAS latency minus one. This is shown in Figure 11 for each possible CAS latency; data element n + 3 is either the last of a burst of four or the last desired of a longer burst. Following the PRECHARGE command, a subsequent command to the same bank cannot be issued until tRP is met. Note that part of the row precharge time is hidden during the access of the last data element(s). In the case of a fixed-length burst being executed to completion, a PRECHARGE command issued at the optimum time (as described above) provides the same op-
T0 CLK
T1
T2
T3
T4
T5
T6
T7
t RP
COMMAND
READ
NOP
NOP
NOP
PRECHARGE X = 1 cycle
NOP
NOP
ACTIVE
ADDRESS
BANK a, COL n
BANK (a or all)
BANK a, ROW
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DQ
CAS Latency = 2
DataShee
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DOUT n
DOUT n+1
DOUT n+2
DOUT n+3
T0 CLK
T1
T2
T3
T4
T5
T6
T7
t RP
COMMAND
READ
NOP
NOP
NOP
PRECHARGE
NOP
NOP
ACTIVE
X = 2 cycles
ADDRESS
BANK a, COL n
BANK (a or all)
BANK a, ROW
DQ
CAS Latency = 3
DOUT n
DOUT n+1
DOUT n+2
DOUT n+3
NOTE: DQM is LOW.
DON'T CARE
Figure 11 READ to PRECHARGE
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eration that would result from the same fixed-length burst with auto precharge. The disadvantage of the PRECHARGE command is that it requires that the command and address buses be available at the appropriate time to issue the command; the advantage of the PRECHARGE command is that it can be used to truncate fixed-length or full-page bursts. Full-page READ bursts can be truncated with the BURST TERMINATE command, and fixed-length READ bursts may be truncated with a BURST TERMINATE command, provided that auto precharge was not activated. The BURST TERMINATE command should be issued x cycles before the clock edge at which the last desired data element is valid, where x equals the CAS latency minus one. This is shown in Figure 12 for each possible CAS latency; data element n + 3 is the last desired data element of a longer burst.
T0 CLK
T1
T2
T3
T4
T5
T6
COMMAND
READ
NOP
NOP
NOP
BURST TERMINATE X = 1 cycle
NOP
NOP
ADDRESS
BANK, COL n
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DQ
CAS Latency = 2 DOUT DOUT n n+1 .com DOUT n+2 DOUT n+3
DataShee
T0 CLK
T1
T2
T3
T4
T5
T6
T7
COMMAND
READ
NOP
NOP
NOP
BURST TERMINATE
NOP
NOP
NOP
X = 2 cycles
ADDRESS
BANK, COL n
DQ
CAS Latency = 3
DOUT n
DOUT n+1
DOUT n+2
DOUT n+3
NOTE: DQM is LOW.
DON'T CARE
Figure 12 Terminating a READ Burst
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WRITEs WRITE bursts are initiated with a WRITE command, shown in Figure 15. Data n + 1 is either the last of a burst as shown in Figure 13. of two or the last desired of a longer burst. The 512Mb The starting column and bank addresses are provided SDRAM uses a pipelined architecture and therefore does not require the 2n rule associated with a prefetch archiwith the WRITE command, and auto precharge is either enabled or disabled for that access. If auto precharge is tecture. A WRITE command can be initiated on any clock enabled, the row being accessed is precharged at the cycle following a previous WRITE command. Full-speed completion of the burst. For the generic WRITE comrandom write accesses within a page can be performed to mands used in the following illustrations, auto precharge the same bank, as shown in Figure 16, or each subsequent is disabled. WRITE may be performed to a different bank. During WRITE bursts, the first valid data-in element will be registered coincident with the WRITE command. Subsequent data elements will be registered on each T0 T1 T2 T3 successive positive clock edge. Upon completion of a fixed-length burst, assuming no other commands have CLK been initiated, the DQs will remain High-Z and any additional input data will be ignored (see Figure 14). A fullpage burst will continue until terminated. (At the end of WRITE NOP NOP NOP COMMAND the page, it will wrap to the start address and continue.) Data for any WRITE burst may be truncated with a subsequent WRITE command, and data for a fixed-length BANK, ADDRESS COL n WRITE burst may be immediately followed by data for a WRITE command. The new WRITE command can be t4U.com issued on any clock following the previous WRITE comDataShee DIN DIN DQ mand, and the data provided coincident with the new n n+1 command applies to the new command. An example is .com
NOTE B
CLK CKE CS# HIGH
tl
th 2 DQM i LOW
Figure 14 WRITE Burst
T0 CLK T1 T2
RAS#
CAS#
COMMAND
WRITE
NOP
WRITE
WE# A0-A9, A11, A12: x4 A0-A9, A11: x8 A0-A9: x16 A12: x4 A11, A12: x8 A9, A11, A12: x16
ENABLE AUTO PRECHARGE
COLUMN ADDRESS
ADDRESS
BANK, COL n
BANK, COL b
DQ NOTE:
DIN n
DIN n+1
DIN b
A10
DISABLE AUTO PRECHARGE
DQM is LOW. Each WRITE command may be to any bank. DON'T CARE
BA0, BA, 1
BANK ADDRESS
Figure 13 WRITE Command
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Figure 15 WRITE to WRITE 21
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Data for any WRITE burst may be truncated with a subsequent READ command, and data for a fixed-length WRITE burst may be immediately followed by a READ command. Once the READ command is registered, the data inputs will be ignored, and WRITEs will not be executed. An example is shown in Figure 17. Data n + 1 is either the last of a burst of two or the last desired of a longer burst. Data for a fixed-length WRITE burst may be followed by, or truncated with, a PRECHARGE command to the same bank (provided that auto precharge was not activated), and a full-page WRITE burst may be truncated with a PRECHARGE command to the same bank. The PRECHARGE command should be issued tWR after the clock edge at which the last desired input data element is
T0 CLK T1 T2 T3
registered. The auto precharge mode requires a tWR of at least one clock plus time, regardless of frequency. In addition, when truncating a WRITE burst, the DQM signal must be used to mask input data for the clock edge prior to, and the clock edge coincident with, the PRECHARGE command. An example is shown in Figure 18. Data n + 1 is either the last of a burst of two or the last desired of a longer burst. Following the PRECHARGE command, a subsequent command to the same bank cannot be issued until tRP is met. The precharge can be issued coincident with the first coincident clock edge (T2 in Figure 18) on an A1 Version and with the second clock on an A2 Version (Figure 18.) In the case of a fixed-length burst being executed to completion, a PRECHARGE command issued at the optimum time (as described above) provides the same operation that would result from the same fixed-length burst with auto precharge. The disadvantage of the PRECHARGE command is that it requires that the command and address buses be available at the appropriate time to issue the command; the advantage of the
COMMAND
WRITE
WRITE
WRITE
WRITE
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ADDRESS
BANK, COL n BANK, COL a BANK, COL x BANK, COL m
CLK
T0
T1
T2
T3
T4
T5
T6
DataShee
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DQ NOTE:
DIN n DIN a DIN x DIN m
DQM
t RP
Each WRITE command may be to any bank. DQM is LOW.
COMMAND
WRITE
NOP
PRECHARGE
NOP
NOP
ACTIVE
NOP
ADDRESS
BANK a, COL n
t WR
BANK (a or all)
BANK a, ROW
Figure 16 Random WRITE Cycles
T0 CLK T1 T2 T3 T4 T5
DQ
DIN n
DIN n+1
tWR = tCLK < 15ns DQM
t RP
COMMAND
WRITE
NOP
NOP
PRECHARGE
NOP
NOP
ACTIVE
COMMAND
WRITE
NOP
READ
NOP
NOP
NOP
ADDRESS
BANK a, COL n
t WR
BANK (a or all)
BANK a, ROW
ADDRESS
BANK, COL n
BANK, COL b
DQ
DIN n
DIN n+1
NOTE: DQM could remain LOW in this example if the WRITE burst is a fixed length of two.
DQ NOTE:
DIN n
DIN n+1
DOUT b
DOUT b+1
DON'T CARE
The WRITE command may be to any bank, and the READ command may be to any bank. DQM is LOW. CAS latency = 2 for illustration.
Figure 17 WRITE To READ
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512Mb: x4, x8, x16 SDRAM 512MSDRAM_D.p65 - Rev. D; Pub 1/02
Figure 18 WRITE To PRECHARGE
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ADVANCE
512Mb: x4, x8, x16 SDRAM
PRECHARGE command is that it can be used to truncate fixed-length or full-page bursts. Fixed-length or full-page WRITE bursts can be truncated with the BURST TERMINATE command. When truncating a WRITE burst, the input data applied coincident with the BURST TERMINATE command will be ignored. The last data written (provided that DQM is LOW at that time) will be the input data applied one clock previous to the BURST TERMINATE command. This is
T0 CLK T1 T2
shown in Figure 19, where data n is the last desired data element of a longer burst. PRECHARGE The PRECHARGE command (see Figure 20) is used to deactivate the open row in a particular bank or the open row in all banks. The bank(s) will be available for a subsequent row access some specified time (tRP) after the precharge command is issued. Input A10 determines whether one or all banks are to be precharged, and in the case where only one bank is to be precharged, inputs BA0, BA1 select the bank. When all banks are to be precharged, inputs BA0, BA1 are treated as "Don't Care." Once a bank has been precharged, it is in the idle state and must be activated prior to any READ or WRITE commands being issued to that bank.
COMMAND
WRITE
BURST TERMINATE
NEXT COMMAND
ADDRESS
BANK, COL n
(ADDRESS)
DQ
DIN n
(DATA)
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NOTE: DQMs are LOW.
Figure 19 Terminating a WRITE Burst
CLK CKE CS# HIGH
POWER-DOWN Power-down occurs if CKE is registered low coincident with a NOP or COMMAND INHIBIT when no accesses are in progress. If power-down occurs when all banks are idle, this mode is referred to as precharge power-down; if power-down occurs when there is a row active in any bank, this mode is referred to as active DataShee power-down. Entering power-down deactivates the input and .com output buffers, excluding CKE, for maximum power savings while in standby. The device may not remain in the power-down state longer than the refresh period (64ms) since no refresh operations are performed in this mode. The power-down state is exited by registering a NOP or COMMAND INHIBIT and CKE HIGH at the desired clock edge (meeting tCKS). (See Figure 21.)
RAS#
CLK tCKS CKE
(( )) (( ))
CAS#
> tCKS
WE#
(( ))
COMMAND
NOP
A0-A9, A11, A12
(( )) (( ))
NOP
ACTIVE
All banks idle Input buffers gated off
All Banks
tRCD tRAS tRC DON'T CARE
Enter power-down mode.
Exit power-down mode.
A10
Bank Selected
BA0, BA1
BANK ADDRESS
Figure 20 PRECHARGE Command
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512Mb: x4, x8, x16 SDRAM 512MSDRAM_D.p65 - Rev. D; Pub 1/02
Figure 21 Power-Down
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ADVANCE
512Mb: x4, x8, x16 SDRAM
CLOCK SUSPEND The clock suspend mode occurs when a column access/burst is in progress and CKE is registered LOW. In the clock suspend mode, the internal clock is deactivated, "freezing" the synchronous logic. For each positive clock edge on which CKE is sampled LOW, the next internal positive clock edge is suspended. Any command or data present on the input pins at the time of a suspended internal clock edge is ignored; any data present on the DQ pins remains driven; and burst counters are not incremented, as long as the clock is suspended. (See examples in Figures 22 and 23.) Clock suspend mode is exited by registering CKE HIGH; the internal clock and related operation will resume on the subsequent positive clock edge. BURST READ/SINGLE WRITE The burst read/single write mode is entered by programming the write burst mode bit (M9) in the Mode Register to a logic 1. In this mode, all WRITE commands result in the access of a single column location (burst of one), regardless of the programmed burst length. READ commands access columns according to the programmed burst length and sequence, just as in the normal mode of operation (M9 = 0).
T0 CLK
T1
T2
T3
T4
T5
CLK
T0
T1
T2
T3
T4
T5
T6
CKE
CKE
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INTERNAL CLOCK
INTERNAL CLOCK
DataShee
READ NOP NOP NOP NOP NOP
COMMAND
COMMAND
NOP
WRITE
NOP
NOP
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ADDRESS
BANK, COL n
ADDRESS
BANK, COL n
DQ
DIN n DIN n+1 DIN n+2
DOUT n
DOUT n+1
DOUT n+2
DOUT n+3
DIN
NOTE: For this example, CAS latency = 2, burst length = 4 or greater, and DQM is LOW.
DON'T CARE
NOTE: For this example, burst length = 4 or greater, and DM is LOW.
Figure 22 Clock Suspend During WRITE Burst
Figure 23 Clock Suspend During READ Burst
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512Mb: x4, x8, x16 SDRAM
CONCURRENT AUTO PRECHARGE An access command to (READ or WRITE) another bank while an access command with auto precharge enabled is executing is not allowed by SDRAMs, unless the SDRAM supports CONCURRENT AUTO PRECHARGE. Micron SDRAMs support CONCURRENT AUTO PRECHARGE. Four cases where CONCURRENT AUTO PRECHARGE occurs are defined below. READ with auto precharge 1. Interrupted by a READ (with or without auto precharge): A READ to bank m will interrupt a READ
T0 CLK
READ - AP BANK n READ - AP BANK m
on bank n, CAS latency later. The PRECHARGE to bank n will begin when the READ to bank m is registered (Figure 24). 2. Interrupted by a WRITE (with or without auto precharge): A WRITE to bank m will interrupt a READ on bank n when registered. DQM should be used two clocks prior to the WRITE command to prevent bus contention. The PRECHARGE to bank n will begin when the WRITE to bank m is registered (Figure 25).
T1
T2
T3
T4
T5
T6
T7
COMMAND BANK n
NOP
NOP
NOP
NOP
NOP
NOP
Page Active
READ with Burst of 4
Interrupt Burst, Precharge t RP - BANK n
Idle tRP - BANK m Precharge
Internal States
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BANK m
Page Active
READ with Burst of 4
ADDRESS DQ
BANK n, COL a
BANK m, COL d
DataShee
DOUT a DOUT a+1 DOUT d DOUT d+1
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CAS Latency = 3 (BANK n)
NOTE: DQM is LOW.
CAS Latency = 3 (BANK m)
Figure 24 READ With Auto Precharge Interrupted by a READ
T0 CLK
READ - AP BANK n Page Active WRITE - AP BANK m
T1
T2
T3
T4
T5
T6
T7
COMMAND BANK n
NOP
NOP
NOP
NOP
NOP
NOP
READ with Burst of 4
Interrupt Burst, Precharge tRP - BANK n
Idle t WR - BANK m Write-Back
Internal States
BANK m
BANK n, COL a
Page Active
WRITE with Burst of 4
ADDRESS 1 DQM DQ
BANK m, COL d
DOUT a CAS Latency = 3 (BANK n)
DIN d
DIN d+1
DIN d+2
DIN d+3
NOTE: 1. DQM is HIGH at T2 to prevent DOUT-a+1 from contending with DIN-d at T4. DON'T CARE
Figure 25 READ With Auto Precharge Interrupted by a WRITE
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WRITE with auto precharge 3. Interrupted by a READ (with or without AUTO PRECHARGE): A READ to bank m will interrupt a WRITE on bank n when registered, with the data-out appearing CAS latency later. The PRECHARGE to bank n will begin after tWR is met, where tWR begins when the READ to bank m is registered. The last valid WRITE to bank n will be data-in registered one clock prior to the READ to bank m (Figure 26). 4. Interrupted by a WRITE (with or without auto precharge): A WRITE to bank m will interrupt a WRITE on bank n when registered. The PRECHARGE to bank n will begin after tWR is met, where tWR begins when the WRITE to bank m is registered. The last valid data WRITE to bank n will be data registered one clock prior to a WRITE to bank m (Figure 27).
T0 CLK
T1
T2
T3
T4
T5
T6
T7
COMMAND BANK n
NOP
WRITE - AP BANK n
NOP
READ - AP BANK m
NOP
NOP
NOP
NOP
Page Active
WRITE with Burst of 4
Interrupt Burst, Write-Back tWR - BANK n
Precharge tRP - BANK n tRP - BANK m
Internal States
BANK m
Page Active
READ with Burst of 4
ADDRESS
BANK n, COL a DIN a DIN a+1
BANK m, COL d DOUT d CAS Latency = 3 (BANK m) DOUT d+1
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DQ
DataShee
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NOTE: 1. DQM is LOW.
Figure 26 WRITE With Auto Precharge Interrupted by a READ
T0 CLK
WRITE - AP BANK n WRITE - AP BANK m
T1
T2
T3
T4
T5
T6
T7
COMMAND BANK n
NOP
NOP
NOP
NOP
NOP
NOP
Page Active
WRITE with Burst of 4
Interrupt Burst, Write-Back tWR - BANK n
Precharge tRP - BANK n t WR - BANK m Write-Back
Internal States
BANK m
Page Active
WRITE with Burst of 4
ADDRESS DQ NOTE: 1. DQM is LOW.
BANK n, COL a DIN a DIN a+1 DIN a+2
BANK m, COL d DIN d DIN d+1 DIN d+2 DIN d+3
DON'T CARE
Figure 27 WRITE With Auto Precharge Interrupted by a WRITE
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512Mb: x4, x8, x16 SDRAM
TRUTH TABLE 2 - CKE
(Notes: 1-4) CKEn-1 CKEn L L CURRENT STATE Power-Down Self Refresh Clock Suspend L H Power-Down Self Refresh Clock Suspend H L All Banks Idle All Banks Idle Reading or Writing H
NOTE: 1. 2. 3. 4. 5.
COMMANDn X X X COMMAND INHIBIT or NOP COMMAND INHIBIT or NOP X COMMAND INHIBIT or NOP AUTO REFRESH VALID See Truth Table 3 (page 28)
ACTIONn Maintain Power-Down Maintain Self Refresh Maintain Clock Suspend Exit Power-Down Exit Self Refresh Exit Clock Suspend Power-Down Entry Self Refresh Entry Clock Suspend Entry
NOTES
5 6 7
H
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CKEn is the logic state of CKE at clock edge n; CKEn-1 was the state of CKE at the previous clock edge. Current state is the state of the SDRAM immediately prior to clock edge n. COMMANDn is the command registered at clock edge n, and ACTIONn is a result of COMMANDn. All states and sequences not shown are illegal or reserved. Exiting power-down at clock edge n will put the device in the all banks idle state in time for clock edge n + 1 (provided that tCKS is met). 6. Exiting self refresh at clock edge n will put the device in the all banks idle state once tXSR is met. COMMAND INHIBIT .com or NOP commands should be issued on any clock edges occurring during the tXSR period. A minimum of two NOP commands must be provided during tXSR period. 7. After exiting clock suspend at clock edge n, the device will resume operation and recognize the next command at clock edge n + 1.
DataShee
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TRUTH TABLE 3 - CURRENT STATE BANK n - COMMAND TO BANK n
(Notes: 1-6; notes appear below and on next page) CURRENT STATE CS# RAS# CAS# WE# Any H L L Idle L L L L Row Active Read (Auto Precharge Disabled) Write (Auto Precharge Disabled) L L L L L L L L L L X H L L L L H H L H H L H H H L H X H H L L H L L H L L H H L L H H X H H H L L H L L H L L L H L L L COMMAND (ACTION) COMMAND INHIBIT (NOP/Continue previous operation) NO OPERATION (NOP/Continue previous operation) ACTIVE (Select and activate row) AUTO REFRESH LOAD MODE REGISTER PRECHARGE READ (Select column and start READ burst) WRITE (Select column and start WRITE burst) PRECHARGE (Deactivate row in bank or banks) READ (Select column and start new READ burst) WRITE (Select column and start WRITE burst) PRECHARGE (Truncate READ burst, start PRECHARGE) BURST TERMINATE READ (Select column and start READ burst) WRITE (Select column and start new WRITE burst) PRECHARGE (Truncate WRITE burst, start PRECHARGE) .com BURST TERMINATE 7 7 11 10 10 8 10 10 8 9 10 10 8 9 NOTES
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DataShee
NOTE: 1. This table applies when CKEn-1 was HIGH and CKEn is HIGH (see Truth Table 2) and after tXSR has been met (if the previous state was self refresh). 2. This table is bank-specific, except where noted, i.e., the current state is for a specific bank and the commands shown are those allowed to be issued to that bank when in that state. Exceptions are covered in the notes below. 3. Current state definitions: Idle: The bank has been precharged, and tRP has been met. Row Active: A row in the bank has been activated, and tRCD has been met. No data bursts/accesses and no register accesses are in progress. Read: A READ burst has been initiated, with auto precharge disabled, and has not yet terminated or been terminated. Write: A WRITE burst has been initiated, with auto precharge disabled, and has not yet terminated or been terminated. 4. The following states must not be interrupted by a command issued to the same bank. COMMAND INHIBIT or NOP commands, or allowable commands to the other bank should be issued on any clock edge occurring during these states. Allowable commands to the other bank are determined by its current state and Truth Table 3, and according to Truth Table 4. Precharging: Starts with registration of a PRECHARGE command and ends when tRP is met. Once tRP is met, the bank will be in the idle state. Row Activating: Starts with registration of an ACTIVE command and ends when tRCD is met. Once tRCD is met, the bank will be in the row active state. Read w/Auto Precharge Enabled: Starts with registration of a READ command with auto precharge enabled and ends when tRP has been met. Once tRP is met, the bank will be in the idle state. Write w/Auto Precharge Enabled: Starts with registration of a WRITE command with auto precharge enabled and ends when tRP has been met. Once tRP is met, the bank will be in the idle state.
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512Mb: x4, x8, x16 SDRAM
NOTE (continued): 5. The following states must not be interrupted by any executable command; COMMAND INHIBIT or NOP commands must be applied on each positive clock edge during these states. Refreshing: Starts with registration of an AUTO REFRESH command and ends when tRC is met. Once tRC is met, the SDRAM will be in the all banks idle state. Accessing Mode Register: Starts with registration of a LOAD MODE REGISTER command and ends when tMRD has been met. Once tMRD is met, the SDRAM will be in the all banks idle state. Precharging All: Starts with registration of a PRECHARGE ALL command and ends when tRP is met. Once tRP is met, all banks will be in the idle state. 6. All states and sequences not shown are illegal or reserved. 7. Not bank-specific; requires that all banks are idle. 8. May or may not be bank-specific; if all banks are to be precharged, all must be in a valid state for precharging. 9. Not bank-specific; BURST TERMINATE affects the most recent READ or WRITE burst, regardless of bank. 10. READs or WRITEs listed in the Command (Action) column include READs or WRITEs with auto precharge enabled and READs or WRITEs with auto precharge disabled. 11. Does not affect the state of the bank and acts as a NOP to that bank.
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DataShee
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512Mb: x4, x8, x16 SDRAM
TRUTH TABLE 4 - CURRENT STATE BANK n - COMMAND TO BANK m
(Notes: 1-6; notes appear below and on next page) CURRENT STATE CS# RAS# CAS# WE# Any Idle Row Activating, Active, or Precharging Read (Auto Precharge Disabled) Write (Auto Precharge Disabled) Read (With Auto Precharge) Write (With Auto Precharge) H L X L L L L L L L L L L L L L L L L L L L L X H X L H H L L H H L L H H L L H H L L H H L X H X H L L H H L L H H L L H H L L H H L L H X H X H H L L H H L L H H L L H H L L H H L L COMMAND (ACTION) COMMAND INHIBIT (NOP/Continue previous operation) NO OPERATION (NOP/Continue previous operation) Any Command Otherwise Allowed to Bank m ACTIVE (Select and activate row) READ (Select column and start READ burst) WRITE (Select column and start WRITE burst) PRECHARGE ACTIVE (Select and activate row) READ (Select column and start new READ burst) WRITE (Select column and start WRITE burst) PRECHARGE ACTIVE (Select and activate row) READ (Select column and start READ burst) WRITE (Select column and start new WRITE burst) PRECHARGE ACTIVE (Select and activate row) READ.com start new READ burst) (Select column and WRITE (Select column and start WRITE burst) PRECHARGE ACTIVE (Select and activate row) READ (Select column and start READ burst) WRITE (Select column and start new WRITE burst) PRECHARGE 7, 8, 16 7, 8, 17 9 7, 12 7, 13 9 7, 8, 14 7, 8, 15 9 7, 10 7, 11 9 7 7 NOTES
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DataShee
NOTE: 1. This table applies when CKEn-1 was HIGH and CKEn is HIGH (see Truth Table 2) and after tXSR has been met (if the previous state was self refresh). 2. This table describes alternate bank operation, except where noted; i.e., the current state is for bank n and the commands shown are those allowed to be issued to bank m (assuming that bank m is in such a state that the given command is allowable). Exceptions are covered in the notes below. 3. Current state definitions: Idle: The bank has been precharged, and tRP has been met. Row Active: A row in the bank has been activated, and tRCD has been met. No data bursts/accesses and no register accesses are in progress. Read: A READ burst has been initiated, with auto precharge disabled, and has not yet terminated or been terminated. Write: A WRITE burst has been initiated, with auto precharge disabled, and has not yet terminated or been terminated. Read w/Auto Precharge Enabled: Starts with registration of a READ command with auto precharge enabled, and ends when tRP has been met. Once tRP is met, the bank will be in the idle state. Write w/Auto Precharge Enabled: Starts with registration of a WRITE command with auto precharge enabled, and ends when tRP has been met. Once tRP is met, the bank will be in the idle state.
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512Mb: x4, x8, x16 SDRAM
NOTE (continued): 4. AUTO REFRESH, SELF REFRESH and LOAD MODE REGISTER commands may only be issued when all banks are idle. 5. A BURST TERMINATE command cannot be issued to another bank; it applies to the bank represented by the current state only. 6. All states and sequences not shown are illegal or reserved. 7. READs or WRITEs to bank m listed in the Command (Action) column include READs or WRITEs with auto precharge enabled and READs or WRITEs with auto precharge disabled. 8. CONCURRENT AUTO PRECHARGE: Bank n will initiate the auto precharge command when its burst has been interrupted by bank m's burst. 9. Burst in bank n continues as initiated. 10. For a READ without auto precharge interrupted by a READ (with or without auto precharge), the READ to bank m will interrupt the READ on bank n, CAS latency later (Figure 7). 11. For a READ without auto precharge interrupted by a WRITE (with or without auto precharge), the WRITE to bank m will interrupt the READ on bank n when registered (Figures 9 and 10). DQM should be used one clock prior to the WRITE command to prevent bus contention. 12. For a WRITE without auto precharge interrupted by a READ (with or without auto precharge), the READ to bank m will interrupt the WRITE on bank n when registered (Figure 17), with the data-out appearing CAS latency later. The last valid WRITE to bank n will be data-in registered one clock prior to the READ to bank m. 13. For a WRITE without auto precharge interrupted by a WRITE (with or without auto precharge), the WRITE to bank m will interrupt the WRITE on bank n when registered (Figure 15). The last valid WRITE to bank n will be data-in registered one clock prior to the READ to bank m.
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14. For a READ with auto precharge interrupted by a READ (with or without auto precharge), the READ to bank m will interrupt the READ on bank n, CAS latency later. The PRECHARGE to bank n will begin when the READ to bank m is registered (Figure 24). 15. For a READ with auto precharge interrupted by a WRITE (with or without auto precharge), the WRITE to bank m will .com interrupt the READ on bank n when registered. DQM should be used two clocks prior to the WRITE command to prevent bus contention. The PRECHARGE to bank n will begin when the WRITE to bank m is registered (Figure 25). 16. For a WRITE with auto precharge interrupted by a READ (with or without auto precharge), the READ to bank m will interrupt the WRITE on bank n when registered, with the data-out appearing CAS latency later. The PRECHARGE to bank n will begin after tWR is met, where tWR begins when the READ to bank m is registered. The last valid WRITE to bank n will be data-in registered one clock prior to the READ to bank m (Figure 26). 17. For a WRITE with auto precharge interrupted by a WRITE (with or without auto precharge), the WRITE to bank m will interrupt the WRITE on bank n when registered. The PRECHARGE to bank n will begin after tWR is met, where tWR begins when the WRITE to bank m is registered. The last valid WRITE to bank n will be data registered one clock prior to the WRITE to bank m (Figure 27).
DataShee
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512Mb: x4, x8, x16 SDRAM
ABSOLUTE MAXIMUM RATINGS*
Voltage on VDD, VDDQ Supply Relative to VSS ....................................... -1V to +4.6V Voltage on Inputs, NC or I/O Pins Relative to VSS ....................................... -1V to +4.6V Operating Temperature, TA (Commercial) ................................... 0C to +70C Storage Temperature (plastic) ............ -55C to +150C Power Dissipation ................................................... 1W *Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(Notes: 1, 5, 6; notes appear on page 35) (VDD, VDDQ = +3.3V 0.3V) PARAMETER/CONDITION Supply Voltage Input High Voltage: Logic 1; All inputs Input Low Voltage: Logic 0; All inputs Input Leakage Current: Any input 0V VIN VDD (All other pins not under test = 0V) SYMBOL VDD, VDDQ VIH VIL II IOZ MIN 3 2 -0.3 -5 -5 2.4 - MAX 3.6 VDD + 0.3 0.8 5 5 - 0.4 UNITS NOTES V V V A A V V 26 26 22 22
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Output Leakage Current: DQs are disabled; 0V VOUT VDDQ Output Levels: Output High Voltage (IOUT = -4mA) Output Low Voltage (IOUT = 4mA)
DataShee
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VOH VOL
IDD SPECIFICATIONS AND CONDITIONS
(Notes: 1, 5, 6, 11, 13; notes appear on page 35) (VDD, VDDQ = +3.3V 0.3V) PARAMETER/CONDITION Operating Current: Active Mode; Burst = 1; READ or WRITE; tRC = tRC (MIN) Standby Current: Power-Down Mode; CKE = LOW; All banks idle Standby Current: Active Mode; CS# = HIGH; CKE = HIGH; All banks active after tRCD met; No accesses in progress Operating Current: Burst Mode; Continuous burst; READ or WRITE; All banks active Auto Refresh Current: CS# = HIGH; CKE = HIGH Self Refresh Current: CKE 0.2V
tRFC tRFC
MAX -7E TBD TBD TBD -75 TBD TBD TBD UNITS NOTES mA mA mA 3, 18, 19, 29 29 3, 12, 19, 29 3, 18, 19, 29 3, 12, 18, 19, 29,30 4
SYMBOL IDD1 IDD2 IDD3
IDD4 = tRFC (MIN) = 7.81s IDD5 IDD6 IDD7 IDD7
TBD TBD TBD TBD TBD
TBD TBD TBD TBD TBD
mA mA mA mA mA
Standard Low power (L)
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512Mb: x4, x8, x16 SDRAM
CAPACITANCE
(Note: 2; notes appear on page 35) PARAMETER Input Capacitance: CLK Input Capacitance: All other input-only pins Input/Output Capacitance: DQs SYMBOL CI1 CI2 CIO MIN 2.5 2.5 4.0 MAX 3.5 3.8 6.0 UNITS pF pF pF
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
(Notes: 5, 6, 8, 9, 11; notes appear on page 35)
AC CHARACTERISTICS PARAMETER Access time from CLK (pos. edge) Address hold time Address setup time CLK high-level width CLK low-level width Clock cycle time CKE hold time CKE setup time CS#, RAS#, CAS#, WE#, DQM hold time CS#, RAS#, CAS#, WE#, DQM setup time Data-in hold time Data-in setup time Data-out high-impedance time -7E SYMBOL MIN MAX tAC(3) 5.4 tAC(2) 5.4 tAH 0.8 tAS 1.5 tCH 2.5 tCL 2.5 tCK(3) 7 tCK(2) 7.5 tCKH 0.8 .com tCKS 1.5 tCMH 0.8 tCMS 1.5 tDH 0.8 tDS 1.5 tHZ(3) 5.4 tHZ(2) 5.4 tLZ 1 tOH 2.7 tOH 1.8 N tRAS 37 120,000 tRC 60 tRCD 15 tREF 64 tRFC 66 tRP 15 tRRD 14 tT 0.3 1.2 tWR 1 CLK + 7ns 14 tXSR 67 -75 MIN MAX 5.4 6 UNITS ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ms ns ns ns ns - ns ns NOTES 27
CL = 3 CL = 2
t4U.com
CL = 3 CL = 2
0.8 1.5 2.5 2.5 7.5 10 0.8 1.5 0.8 1.5 0.8 1.5 5.4 6 1 2.7 1.8 44 66 20 66 20 15 0.3 1 CLK + 7.5ns 15 75
23 23
DataShee
CL = 3 CL = 2
10 10
Data-out low-impedance time Data-out hold time (load) Data-out hold time (no load) ACTIVE to PRECHARGE command ACTIVE to ACTIVE command period ACTIVE to READ or WRITE delay Refresh period (8,192 rows) AUTO REFRESH period PRECHARGE command period ACTIVE bank a to ACTIVE bank b command Transition time WRITE recovery time
28
120,000
64
1.2
Exit SELF REFRESH to ACTIVE command
7 24 14 25 20
.com
512Mb: x4, x8, x16 SDRAM 512MSDRAM_D.p65 - Rev. D; Pub 1/02
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Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2000, Micron Technology, Inc.
DataSheet 4 U .com
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ADVANCE
512Mb: x4, x8, x16 SDRAM
AC FUNCTIONAL CHARACTERISTICS
(Notes: 5, 6, 7, 8, 9, 11; notes appear on page 35)
PARAMETER READ/WRITE command to READ/WRITE command CKE to clock disable or power-down entry mode CKE to clock enable or power-down exit setup mode DQM to input data delay DQM to data mask during WRITEs DQM to data high-impedance during READs WRITE command to input data delay Data-in to ACTIVE command Data-in to PRECHARGE command Last data-in to burst STOP command Last data-in to new READ/WRITE command Last data-in to PRECHARGE command LOAD MODE REGISTER command to ACTIVE or REFRESH command Data-out to high-impedance from PRECHARGE command SYMBOL tCCD tCKED tPED tDQD tDQM tDQZ tDWD tDAL tDPL tBDL tCDL tRDL tMRD tROH(3) tROH(2) -7E 1 1 1 0 0 2 0 4 2 1 1 2 2 3 2 -75 1 1 1 0 0 2 0 5 2 1 1 2 2 3 2 UNITS tCK tCK tCK tCK tCK tCK tCK tCK tCK tCK tCK tCK tCK tCK tCK NOTES 17 14 14 17 17 17 17 15, 21 16, 21 17 17 16, 21 26 17 17
CL = 3 CL = 2
t4U.com
DataShee
.com
.com
512Mb: x4, x8, x16 SDRAM 512MSDRAM_D.p65 - Rev. D; Pub 1/02
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Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2000, Micron Technology, Inc.
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ADVANCE
512Mb: x4, x8, x16 SDRAM
NOTES 1. All voltages referenced to VSS. 13. IDD specifications are tested after the device is 2. This parameter is sampled. VDD, VDDQ = +3.3V; properly initialized. f = 1 MHz, TA = 25C; pin under test biased at 1.4V. 14. Timing actually specified by tCKS; clock(s) 3. IDD is dependent on output loading and cycle specified as a reference only at minimum cycle rates. Specified values are obtained with minimum rate. cycle time and the outputs open. 15. Timing actually specified by tWR plus tRP; clock(s) 4. Enables on-chip refresh and address counters. specified as a reference only at minimum cycle 5. The minimum specifications are used only to rate. indicate cycle time at which proper operation over 16. Timing actually specified by tWR. the full temperature range (0C TA 70C) is 17. Required clocks are specified by JEDEC functionalensured. ity and are not dependent on any timing param6. An initial pause of 100s is required after powereter. up, followed by two AUTO REFRESH commands, 18. The IDD current will increase or decrease in a before proper device operation is ensured. (VDD proportional amount by the amount the frequency and VDDQ must be powered up simultaneously. VSS is altered for the test condition. and VSSQ must be at same potential.) The two 19. Address transitions average one transition every AUTO REFRESH command wake-ups should be two clocks. repeated any time the tREF refresh requirement is 20. CLK must be toggled a minimum of two times exceeded. during this period. 7. AC characteristics assume tT = 1ns. 21. Based on tCK = 7.5ns for -75 and -7E. 8. In addition to meeting the transition rate specifi22. VIH overshoot: VIH (MAX) = VDDQ + 2V for a pulse cation, the clock and CKE must transit between VIH width 3ns, and the pulse width cannot be greater and VIL (or between VIL and VIH) in a monotonic t4U.com than one third of the cycle rate. VIL undershoot: VIL DataShee manner. (MIN) = -2V for a pulse width 3ns. 9. Outputs measured at 1.5V with equivalent load: .com clock frequency must remain constant (stable 23. The clock is defined as a signal cycling within timing constraints specified for the clock pin) during Q access or precharge states (READ, WRITE, includ50pF ing tWR, and PRECHARGE commands). CKE may be used to reduce the data rate. 24. Auto precharge mode only. The precharge timing budget (tRP) begins 7.5ns/7ns after the first clock delay, after the last WRITE is executed. 10. tHZ defines the time at which the output achieves the open circuit condition; it is not a reference to 25. Precharge mode only. 26. JEDEC and PC100, PC133 specify three clocks. VOH or VOL. The last valid data element will meet tOH before going High-Z. 27. tAC for -75/-7E at CL = 3 with no load is 4.6ns and is 11. AC timing and IDD tests have VIL = 0V and VIH = 3V, guaranteed by design. with timing referenced to 1.5V crossover point. If 28. Parameter guaranteed by design. the input transition time is longer than 1 ns, then 29. For -75, CL = 3, tCK = 7.5ns; For -7E, CL = 2, tCK = 7.5ns the timing is referenced at VIL (MAX) and VIH (MIN) and no longer at the 1.5V crossover point. 30. CKE is HIGH during refresh command period tRFC(MIN) else CKE is LOW. The IDD6 limit is 12. Other input signals are allowed to transition no more than once every two clocks and are otherwise actually a nominal value and does not result in a at valid VIH or VIL levels. fail value.
.com
512Mb: x4, x8, x16 SDRAM 512MSDRAM_D.p65 - Rev. D; Pub 1/02
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Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2000, Micron Technology, Inc.
DataSheet 4 U .com
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ADVANCE
512Mb: x4, x8, x16 SDRAM
INITIALIZE AND LOAD MODE REGISTER
T0 CK (( ))
(( )) (( ))
2
Tp + 2 Tp + 3
tCK
T1
tCKS
tCKH
(( )) (( )) (( )) (( ))
Tn + 1 tCH
(( )) (( ))
To + 1 tCL
(( )) (( ))
Tp + 1
CKE
(( )) tCMS tCMH
AUTO REFRESH
(( )) NOP NOP (( )) (( )) (( ))
(( ))
tCMS tCMH COMMAND
(( )) (( ))
tCMS tCMH
(( )) PRECHARGE (( ))
NOP
AUTO REFRESH
(( )) NOP NOP (( )) (( )) (( ))
LOAD MODE REGISTER
NOP
ACTIVE
DQM/ DQML, DQMH
(( )) (( ))
(( )) (( )) (( )) (( )) (( )) (( ))
A0-A9, A11, A12
(( )) (( )) (( )) (( )) (( )) (( ))
(( )) (( )) (( )) (( )) (( )) (( ))
(( )) (( )) (( )) (( )) (( )) (( ))
tAS
tAH 5
ROW
CODE
ALL BANKS SINGLE BANK
tAS
tAH
ROW
A10
CODE
BA0, BA1
ALL BANKS
(( )) (( ))
BANK
t4U.com
DQ
(( )) T = 100s MIN Power-up: VDD and CLK stable
High-Z
(( )) tRP tRFC tRFC tMRD
DataShee
.com
Precharge all banks AUTO REFRESH AUTO REFRESH Program Mode Register 1, 3, 4 DON'T CARE UNDEFINED
TIMING PARAMETERS
-7E MAX -75 MAX -7E MAX -75 MAX
SYMBOL* tAH
tAS tCH tCL tCK
MIN 0.8 1.5 2.5 2.5 7 7.5 0.8
MIN 0.8 1.5 2.5 2.5 7.5 10 0.8
UNITS ns ns ns ns ns ns ns
SYMBOL* tCKS
tCMH tCMS tMRD3 tRFC tRP
MIN 1.5 0.8 1.5 2 66 15
MIN 1.5 0.8 1.5 2 66 20
UNITS ns ns ns
tCK
(3) tCK (2)
tCKH
ns ns
*CAS latency indicated in parentheses. NOTE: 1. 2. 3. 4. 5. The Mode Register may be loaded prior to the AUTO REFRESH cycles if desired. If CS is HIGH at clock high time, all commands applied are NOP, with CKE a "Don't Care." JEDEC and PC100 specify three clocks. Outputs are guaranteed High-Z after command is issued. A12 should be a LOW at tP + 1.
.com
512Mb: x4, x8, x16 SDRAM 512MSDRAM_D.p65 - Rev. D; Pub 1/02
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Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2000, Micron Technology, Inc.
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ADVANCE
512Mb: x4, x8, x16 SDRAM
POWER-DOWN MODE
T0 CLK tCK T1 tCL tCKS CKE tCKS tCKH tCH T2
(( )) (( ))
1
Tn + 1 Tn + 2
tCKS
(( ))
tCMS tCMH COMMAND
PRECHARGE NOP NOP
(( )) (( )) (( )) (( )) (( )) (( ))
NOP
ACTIVE
DQM/ DQML, DQMH
A0-A9, A11, A12
ALL BANKS
ROW
A10
SINGLE BANK
(( )) (( ))
ROW
t4U.com
BA0, BA1
tAS
tAH
(( )) (( ) .com )
(( ))
DataShee
BANK
BANK(S)
High-Z
DQ Two clock cycles Precharge all active banks All banks idle, enter power-down mode
Input buffers gated off while in power-down mode All banks idle Exit power-down mode DON'T CARE
TIMING PARAMETERS
-7E MAX -75 MAX -7E MAX -75 MAX
SYMBOL*
tAH tAS tCH tCL tCK
MIN 0.8 1.5 2.5 2.5 7
MIN 0.8 1.5 2.5 2.5 7.5
UNITS ns ns ns ns ns
SYMBOL*
tCK
MIN 7.5 0.8 1.5 0.8 1.5
MIN 10 0.8 1.5 0.8 1.5
UNITS ns ns ns ns ns
(2) tCKH
tCKS tCMH tCMS
(3)
*CAS latency indicated in parentheses. NOTE: 1. Violating refresh requirements during power-down may result in a loss of data.
.com
512Mb: x4, x8, x16 SDRAM 512MSDRAM_D.p65 - Rev. D; Pub 1/02
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Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2000, Micron Technology, Inc.
DataSheet 4 U .com
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ADVANCE
512Mb: x4, x8, x16 SDRAM
CLOCK SUSPEND MODE 1
T0 CLK tCK T1 tCL tCH tCKS tCKH CKE tCKS tCKH T2 T3 T4 T5 T6 T7 T8 T9
tCMS tCMH COMMAND
READ NOP NOP NOP NOP NOP WRITE NOP
tCMS tCMH DQM/ DQML, DQMH A0-A9, A11, A12
tAS
tAH
2 COLUMN e 2
COLUMN m
tAS A10 tAS BA0, BA1
tAH
tAH
BANK BANK
tAC tAC tOH
DOUT m
tHZ
DOUT m + 1
tDS
tDH
DOUT e + 1
t4U.com
DQ
tLZ
DOUT e
DataShee
.com
DON'T CARE
TIMING PARAMETERS
-7E MAX 5.4 5.4 -75 MAX 5.4 6 -7E MAX -75 MAX
SYMBOL* tAC (3) tAC (2) tAH tAS
tCH tCL tCK
MIN
MIN
0.8 1.5 2.5 2.5 7 7.5 0.8
0.8 1.5 2.5 2.5 7.5 10 0.8
UNITS ns ns ns ns ns ns ns ns ns
SYMBOL* tCKS tCMH tCMS tDH
tDS tHZ tHZ tLZ tOH
MIN 1.5 0.8 1.5 0.8 1.5
MIN 1.5 0.8 1.5 0.8 1.5
UNITS ns ns ns ns ns ns ns ns ns
(3) (2) 1 2.7
5.4 5.4 1 2.7
5.4 6
(3) (2) tCKH
tCK
*CAS latency indicated in parentheses. NOTE: 1. For this example, the burst length = 2, the CAS latency = 3, and AUTO PRECHARGE is disabled. 2. x16: A11 and A12 = "Don't Care" x8: A12 = "Don't Care"
.com
512Mb: x4, x8, x16 SDRAM 512MSDRAM_D.p65 - Rev. D; Pub 1/02
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Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2000, Micron Technology, Inc.
DataSheet 4 U .com
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ADVANCE
512Mb: x4, x8, x16 SDRAM
AUTO REFRESH MODE
T0
CLK tCK
T1
T2
tCH
(( )) (( ))
(( ))
Tn + 1
tCL
(( )) (( ))
(( ))
To + 1
CKE tCKS tCMS COMMAND tCKH tCMH
NOP AUTO REFRESH NOP
PRECHARGE
(( )) ( ( NOP )) (( )) (( ))
(( )) (( ))
AUTO REFRESH
NOP
(( )) ( ( NOP )) (( )) (( ))
(( )) (( )) (( )) (( ))
ACTIVE
DQM / DQML, DQMH
A0-A9, A11, A12
ALL BANKS
ROW
A10
t4U.com
SINGLE BANK tAS BA0, BA1 tAH
(( )) (( ))
ROW
DataShee
.com
(( )) (( ))
(( )) tRP tRFC tRFC
BANK(S)
(( )) (( ))
(( ))
BANK
DQ
High-Z
Precharge all active banks
DON'T CARE
TIMING PARAMETERS
-7E SYMBOL* tAH
tAS tCH tCL tCK
-75 MIN 0.8 1.5 2.5 2.5 7.5 10 MAX UNITS ns ns ns ns ns ns SYMBOL* tCKH
tCKS tCMH tCMS tRFC tRP
-7E MIN 0.8 1.5 0.8 1.5 66 15 MAX MIN 0.8 1.5 0.8 1.5 66 20
-75 MAX UNITS ns ns ns ns ns ns
MIN 0.8 1.5 2.5 2.5 7 7.5
MAX
(3) tCK (2)
*CAS latency indicated in parentheses.
.com
512Mb: x4, x8, x16 SDRAM 512MSDRAM_D.p65 - Rev. D; Pub 1/02
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Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2000, Micron Technology, Inc.
DataSheet 4 U .com
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ADVANCE
512Mb: x4, x8, x16 SDRAM
SELF REFRESH MODE
T0 CLK tCK T1 tCH tCL T2
(( )) (( ))
Tn + 1
tCKS
tRAS(MIN)1
(( ))
(( )) (( )) (( )) (( ))
To + 1
To + 2
CKE tCKS tCMS COMMAND tCKH tCMH
NOP AUTO REFRESH
PRECHARGE
(( )) (( )) (( )) (( )) (( )) (( ))
NOP ( (
(( ) ) or COMMAND
INHIBIT
AUTO REFRESH
))
DQM/ DQML, DQMH
(( )) (( )) (( )) (( )) (( )) (( ))
A0-A9, A11,A12
ALL BANKS
A10
SINGLE BANK
(( )) (( ))
t4U.com
BA0, BA1
t AS
tAH
(( )) .com (( )) (( )) (( ))
DataShee
BANK(S)
DQ
High-Z tRP Precharge all active banks
(( ))
(( ))
tXSR Enter self refresh mode Exit self refresh mode (Restart refresh time base) DON'T CARE
CLK stable prior to exiting self refresh mode
TIMING PARAMETERS
-7E MAX -75 MAX -7E MAX -75 MAX
SYMBOL*
tAH tAS tCH tCL tCK tCK
MIN 0.8 1.5 2.5 2.5 7 7.5 0.8
MIN 0.8 1.5 2.5 2.5 7.5 10 0.8
UNITS ns ns ns ns ns ns ns
SYMBOL*
tCKS tCMH tCMS tRAS tRP tXSR
MIN 1.5 0.8 1.5 37 15 67
MIN 1.5 0.8
UNITS ns ns
120,000
(3) (2)
1.5 44 20 75
120,000
ns ns ns ns
tCKH
*CAS latency indicated in parentheses.
NOTES: 1. No maximum time limit for Self Refresh. tRAS(MAX) applies to non-Self Refresh mode. 2. tXSR requires minimum of two clocks regardless of frequency or timing.
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512Mb: x4, x8, x16 SDRAM 512MSDRAM_D.p65 - Rev. D; Pub 1/02
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Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2000, Micron Technology, Inc.
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ADVANCE
512Mb: x4, x8, x16 SDRAM
READ - WITHOUT AUTO PRECHARGE
T0 CLK tCKS CKE tCMS COMMAND tCMH
NOP READ NOP NOP NOP PRECHARGE NOP ACTIVE
1
T6 T7 T8
T1 tCK tCKH tCL
T2 tCH
T3
T4
T5
ACTIVE
tCMS DQM/ DQML, DQMH tAS A0-A9, A11, A12 tAS A10 tAS BA0, BA1 tAH
ROW
tCMH
COLUMN m 2
ROW
tAH
ROW
ALL BANKS ROW DISABLE AUTO PRECHARGE BANK SINGLE BANK BANK BANK
tAH
BANK
tAC
tAC tOH
DOUT m
tAC tOH
DOUT m + 1
tAC tOH
DOUT m + 2
tOH
DOUT m + 3
t4U.com
DQ tRCD tRAS tRC
tLZ CAS Latency
tHZ tRP
DataShee
.com
DON'T CARE UNDEFINED
TIMING PARAMETERS
-7E MAX 5.4 5.4 0.8 1.5 2.5 2.5 7 7.5 0.8 1.5 0.8 1.5 2.5 2.5 7.5 10 0.8 1.5 -75 MAX 5.4 6 -7E UNITS ns ns ns ns ns ns ns ns ns ns SYMBOL*
tCMH tCMS tHZ tHZ tLZ tOH tRAS tRC tRCD tRP
-75 MIN 0.8 1.5 5.4 5.4 5.4 6 1 2.7 44 66 20 20 MAX UNITS ns ns ns ns ns ns ns ns ns ns
SYMBOL* tAC (3)
tAC tAH tAS tCH tCL tCK
MIN
MIN
MIN 0.8 1.5
MAX
(2)
(3) (2) 1 2.7 37 60 15 15
(3) tCK (2)
tCKH tCKS
120,000
120,000
*CAS latency indicated in parentheses. NOTE: 1. For this example, the burst length = 4, the CAS latency = 2, and the READ burst is followed by a "manual" PRECHARGE. 2. x16: A11 and A12 = "Don't Care" x8: A12 = "Don't Care"
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512Mb: x4, x8, x16 SDRAM 512MSDRAM_D.p65 - Rev. D; Pub 1/02
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Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2000, Micron Technology, Inc.
DataSheet 4 U .com
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ADVANCE
512Mb: x4, x8, x16 SDRAM
READ - WITH AUTO PRECHARGE
T0 CLK tCKS CKE tCMS tCMH COMMAND
ACTIVE NOP READ NOP NOP NOP NOP NOP ACTIVE
1
T6 T7 T8
T1 tCK tCKH tCL
T2 tCH
T3
T4
T5
tCMS DQM/ DQML, DQMH tAS A0-A9, A11, A12 tAH
tCMH
ROW
COLUMN m 2
ROW
tAS A10
tAH
ENABLE AUTO PRECHARGE ROW
ROW
tAS BA0, BA1
tAH
BANK BANK
BANK
tAC
tAC tOH
DOUT m
tAC tOH
DOUT m + 1
tAC tOH
DOUT m + 2
tOH
DOUT m + 3
t4U.com
DQ tRCD tRAS tRC
tLZ CAS Latency
tHZ tRP
DataShee
.com
DON'T CARE UNDEFINED
TIMING PARAMETERS
-7E SYMBOL* tAC (3) tAC (2)
tAH tAS tCH tCL tCK tCK
-75 MIN MAX 5.4 6 UNITS ns ns ns ns ns ns ns ns ns ns SYMBOL*
tCMH tCMS tHZ tHZ tLZ tOH tRAS tRC tRCD tRP
MIN
MAX 5.4 5.4
MIN 0.8 1.5
-7E MAX
MIN 0.8 1.5
-75 MAX
UNITS ns ns
0.8 1.5 2.5 2.5 7 7.5 0.8 1.5
0.8 1.5 2.5 2.5 7.5 10 0.8 1.5
(3) (2) 1 2.7 37 60 15 15
5.4 5.4 1 120,000 2.7 44 66 20 20
5.4 6
ns ns ns ns ns ns ns ns
(3) (2)
120,000
tCKH tCKS
*CAS latency indicated in parentheses.
NOTE: 1. For this example, the burst length = 4, and the CAS latency = 2. 2. x16: A11 and A12 = "Don't Care" x8: A12 = "Don't Care"
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512Mb: x4, x8, x16 SDRAM 512MSDRAM_D.p65 - Rev. D; Pub 1/02
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Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2000, Micron Technology, Inc.
DataSheet 4 U .com
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ADVANCE
512Mb: x4, x8, x16 SDRAM
SINGLE READ - WITHOUT AUTO PRECHARGE
T0 CLK tCKS CKE tCMS tCMH COMMAND ACTIVE NOP READ tCMS tCMH DQM/ DQML, DQMH tAS A0-A9, A11, A12 tAS A10 tAS BA0, BA1 tAH ROW tAH ROW tAH BANK DISABLE AUTO PRECHARGE BANK SINGLE BANKS BANK(S) BANK
COLUMN m2
1
T7 T8
T1 tCK tCKH tCL
T2 tCH
T3
T4
T5
T6
NOP
NOP
PRECHARGE
NOP
ACTIVE
NOP
ROW ALL BANKS ROW
tAC DQ tLZ tRCD tRAS tRC CAS Latency
tOH DOUT m tHZ tRP
t4U.com
DataShee
.com
DON'T CARE UNDEFINED
TIMING PARAMETERS
-7E SYMBOL* tAC (3) tAC (2) tAH
tAS tCH tCL tCK
-75 MIN MAX 5.4 6 UNITS ns ns ns ns ns ns ns ns ns ns SYMBOL* tCMH tCMS tHZ (3)
tHZ tLZ tOH tRAS tRC tRCD tRP
MIN
MAX 5.4 5.4
MIN 0.8 1.5
-7E MAX
MIN 0.8 1.5
-75 MAX
0.8 1.5 2.5 2.5 7 7.5 0.8 1.5
0.8 1.5 2.5 2.5 7.5 10 0.8 1.5
5.4 5.4 1 2.7 37 60 15 15 120,000 1 2.7 44 66 20 20
5.4 6
UNITS ns ns ns ns ns ns ns ns ns ns
(2)
(3) tCK (2)
tCKH tCKS
120,000
*CAS latency indicated in parentheses.
NOTE: 1. For this example, the burst length = 1, the CAS latency = 2, and the READ burst is followed by a "manual" PRECHARGE. 2. x16: A11 and A12 = "Don't Care" x8: A12 = "Don't Care"
.com
512Mb: x4, x8, x16 SDRAM 512MSDRAM_D.p65 - Rev. D; Pub 1/02
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Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2000, Micron Technology, Inc.
DataSheet 4 U .com
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ADVANCE
512Mb: x4, x8, x16 SDRAM
SINGLE READ - WITH AUTO PRECHARGE
T0 CLK tCKS CKE tCMS tCMH COMMAND
ACTIVE NOP NOP3 NOP3 READ NOP NOP ACTIVE NOP
1
T1 tCK tCKH tCL
T2 tCH
T3
T4
T5
T6
T7
T8
tCMS DQM/ DQML, DQMH tAS A0-A9, A11 tAH
tCMH
ROW
COLUMN m2
ROW
tAS A10
tAH
ENABLE AUTO PRECHARGE ROW
ROW
tAS BA0, BA1
tAH
BANK BANK
BANK
tAC
t4U.com
DQ tRCD tRAS tRC CAS Latency .com tRP
t OH
DOUT m
DataShee
tHZ
DON'T CARE UNDEFINED
TIMING PARAMETERS
-7E MAX 5.4 5.4 0.8 1.5 2.5 (3) (2) 2.5 7 7.5 0.8 1.5 0.8 1.5 2.5 2.5 7.5 10 0.8 1.5 -75 MAX 5.4 6 -7E MAX -75 MAX
SYMBOL*
tAC
MIN
MIN
UNITS ns ns ns ns ns ns ns ns ns ns
SYMBOL*
tCMH tCMS tHZ tHZ tLZ tOH tRAS tRC tRCD tRP
MIN 0.8 1.5
MIN 0.8 1.5
UNITS ns ns
(3) tAC (2)
tAH tAS tCH tCL tCK tCK
(3) (2) 1 2.7 37 60 15 15
5.4 5.4 1 120,000 2.7 44 66 20 20
5.4 6
ns ns ns ns ns ns ns ns
120,000
tCKH tCKS
*CAS latency indicated in parentheses. NOTE: 1. For this example, the burst length = 1, and the CAS latency = 2. 2. x16: A11 and A12 = "Don't Care" x8: A12 = "Don't Care" 3. READ command not allowed else tRAS would be violated
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512Mb: x4, x8, x16 SDRAM 512MSDRAM_D.p65 - Rev. D; Pub 1/02
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Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2000, Micron Technology, Inc.
DataSheet 4 U .com
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ADVANCE
512Mb: x4, x8, x16 SDRAM
ALTERNATING BANK READ ACCESSES
T0 CLK tCKS CKE tCMS COMMAND tCMH
NOP READ NOP ACTIVE NOP READ NOP ACTIVE
1
T7 T8
T1 tCK tCKH tCL
T2 tCH
T3
T4
T5
T6
ACTIVE
tCMS DQM/ DQML, DQMH tAS A0-A9, A11, A12 tAH
tCMH
ROW
COLUMN m 2
ROW
COLUMN b 2
ROW
tAS A10
tAH
ENABLE AUTO PRECHARGE ROW
ENABLE AUTO PRECHARGE ROW
ROW
tAS BA0, BA1
tAH
BANK 0 BANK 3 BANK 3 BANK 0
BANK 0
tAC
tAC tOH
DOUT m
tAC tOH
DOUT m + 1
tAC tOH
DOUT m + 2
tAC tOH
DOUT m + 3
tAC tOH
DOUT b
t4U.com
DQ tRCD - BANK 0 tRAS - BANK 0 tRC - BANK 0 tRRD
tLZ
DataShee
CAS Latency - BANK 0 .com
tRP - BANK 0
tRCD - BANK 0
tRCD - BANK 1
CAS Latency - BANK 1
DON'T CARE UNDEFINED
TIMING PARAMETERS
-7E MAX 5.4 5.4 -75 MAX 5.4 6 -7E MAX -75 MAX
SYMBOL* tAC (3) tAC (2)
tAH tAS tCH tCL tCK tCK
MIN
MIN
UNITS ns ns ns ns ns ns ns ns ns ns
SYMBOL* tCMH tCMS
tLZ tOH tRAS tRC tRCD tRP tRRD
MIN 0.8 1.5 1 2.7 37 60 15 15 14
MIN 0.8 1.5 1 2.7
UNITS ns ns ns ns
0.8 1.5 2.5 2.5 7 7.5 0.8 1.5
0.8 1.5 2.5 2.5 7.5 10 0.8 1.5
120,000
(3)
44 66 20 20 15
120,000
ns ns ns ns ns
(2) tCKH
tCKS
*CAS latency indicated in parentheses. NOTE: 1. For this example, the burst length = 4, and the CAS latency = 2. 2. x16: A11 and A12 = "Don't Care" x8: A12 = "Don't Care"
.com
512Mb: x4, x8, x16 SDRAM 512MSDRAM_D.p65 - Rev. D; Pub 1/02
45
Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2000, Micron Technology, Inc.
DataSheet 4 U .com
www..com
ADVANCE
512Mb: x4, x8, x16 SDRAM
READ - FULL-PAGE BURST
T0 CLK tCKS CKE tCMS COMMAND tCMH
NOP READ NOP NOP NOP NOP
1
Tn + 1 Tn + 2 Tn + 3 Tn + 4
T1 tCL tCH tCKH tCK
T2
T3
T4
T5
T6
(( )) (( ))
(( )) (( )) (( )) (( )) (( )) (( ))
ACTIVE
NOP
BURST TERM
NOP
NOP
tCMS DQM/ DQML, DQMH tAS A0-A9, A11, A12 tAH
tCMH
ROW
COLUMN m 2
(( )) (( ))
tAS A10
tAH
ROW
(( )) (( ))
tAS BA0, BA1
tAH
BANK
BANK
(( )) (( ))
tAC
tAC tOH
DOUT m+1
t4U.com
DQ tLZ tRCD CAS Latency
tAC
tOH
DOUT m
tAC ( ( tOH ) )
(( )) DOUT m+2 (( ))
tAC tOH
DOUT m-1
tAC tOH
Dout m
tOH
DOUT m+1
DataShee
.com
1,024 (x16) locations within same row 2,048 (x8) locations within same row 4,096 (x4) locations within same row
tHZ
Full page completed Full-page burst does not self-terminate. 3 Can use BURST TERMINATE command.
DON'T CARE UNDEFINED
TIMING PARAMETERS
-7E MAX 5.4 5.4 0.8 1.5 2.5 (3) (2) 2.5 7 7.5 0.8 0.8 1.5 2.5 2.5 7.5 10 0.8 -75 MAX 5.4 6 -7E MAX -75 MAX
SYMBOL*
tAC
MIN
MIN
UNITS ns ns ns ns ns ns ns ns ns
SYMBOL*
tCKS tCMH tCMS tHZ tLZ tOH tRCD
MIN 1.5 0.8 1.5
MIN 1.5 0.8 1.5
UNITS ns ns
(3) tAC (2)
tAH tAS tCH tCL tCK tCK
(3) tHZ (2) 1 2.7 15
5.4 5.4 1 2.7 20
5.4 6
ns ns ns ns ns ns
tCKH
*CAS latency indicated in parentheses. NOTE: 1. For this example, the CAS latency = 2. 2. x16: A11 and A12 = "Don't Care" x8: A12 = "Don't Care" 3. Page left open; no tRP.
.com
512Mb: x4, x8, x16 SDRAM 512MSDRAM_D.p65 - Rev. D; Pub 1/02
46
Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2000, Micron Technology, Inc.
DataSheet 4 U .com
www..com
ADVANCE
512Mb: x4, x8, x16 SDRAM
READ - DQM OPERATION
T0 CLK tCKS CKE tCMS COMMAND tCMH
NOP READ NOP NOP NOP NOP NOP NOP
1
T6 T7 T8
T1 tCK tCKH tCL
T2 tCH
T3
T4
T5
ACTIVE
tCMS DQM/ DQML, DQMH tAS A0-A9, A11, A12 tAH
tCMH
ROW
COLUMN m 2 ENABLE AUTO PRECHARGE
tAS A10
tAH
ROW
tAS BA0, BA1
tAH
BANK
DISABLE AUTO PRECHARGE BANK
tAC
tOH
DOUT m
tAC
tAC tOH
DOUT m + 2
tOH
DOUT m + 3
t4U.com
DQ
tLZ tRCD CAS Latency
tHZ
tLZ
tHZ
DataShee
.com
DON'T CARE UNDEFINED
TIMING PARAMETERS
-7E SYMBOL* tAC (3) tAC (2) tAH
tAS tCH tCL tCK
-75 MIN MAX 5.4 6 UNITS ns ns ns ns ns ns ns ns ns SYMBOL* tCKS tCMH tCMS
tHZ tHZ tLZ tOH tRCD
-7E MIN 1.5 0.8 1.5 MAX MIN 1.5 0.8 1.5
-75 MAX UNITS ns ns ns ns ns ns ns ns
MIN
MAX 5.4 5.4
0.8 1.5 2.5 2.5 7 7.5 0.8
0.8 1.5 2.5 2.5 7.5 10 0.8
(3) (2) 1 2.7 15
5.4 5.4 1 2.7 20
5.4 6
(3) tCK (2)
tCKH
*CAS latency indicated in parentheses.
NOTE: 1. For this example, the burst length = 4, and the CAS latency = 2. 2. x16: A11 and A12 = "Don't Care" x8: A12 = "Don't Care"
.com
512Mb: x4, x8, x16 SDRAM 512MSDRAM_D.p65 - Rev. D; Pub 1/02
47
Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2000, Micron Technology, Inc.
DataSheet 4 U .com
www..com
ADVANCE
512Mb: x4, x8, x16 SDRAM
WRITE - WITHOUT AUTO PRECHARGE
T0 CLK tCKS CKE tCMS COMMAND tCMH
NOP WRITE NOP NOP NOP NOP PRECHARGE NOP ACTIVE
1
T7 T8 T9
tCK tCKH
T1
tCL
T2 tCH
T3
T4
T5
T6
ACTIVE
tCMS tCMH DQM/ DQML, DQMH tAS A0-A9, A11, A12 tAH
COLUMN m 3 ALL BANKs ROW DISABLE AUTO PRECHARGE BANK SINGLE BANK BANK BANK ROW
ROW
tAS A10
tAH
ROW
tAS BA0, BA1
tAH
BANK
tDS
tDH DIN m
tDS
tDH
tDS
tDH
tDS
tDH
t4U.com
DQ tRCD tRAS tRC
DIN m + 1
DIN m + 2
DIN m + 3 t WR 2 tRP
DataShee
.com
DON'T CARE
TIMING PARAMETERS
-7E SYMBOL* tAH
tAS tCH tCL tCK tCK
-75 MIN 0.8 1.5 2.5 2.5 7.5 10 0.8 1.5 0.8 MAX UNITS ns ns ns ns ns ns ns ns ns SYMBOL* tCMS tDH
tDS tRAS tRC tRCD tRP tWR
MIN 0.8 1.5 2.5 2.5
MAX
MIN 1.5 0.8 1.5 37 60 15 15 14
-7E MAX
MIN 1.5 0.8 1.5 44 66 20 20 15
-75 MAX
UNITS ns ns ns ns ns ns ns ns
120,000
120,000
(3) (2)
7 7.5 0.8 1.5 0.8
tCKH tCKS tCMH
*CAS latency indicated in parentheses. NOTE: 1. For this example, the burst length = 4, and the WRITE burst is followed by a "manual" PRECHARGE. 2. 14ns to 15ns is required between and the PRECHARGE command, regardless of frequency. 3. x16: A11 and A12 = "Don't Care" x8: A12 = "Don't Care"
.com
512Mb: x4, x8, x16 SDRAM 512MSDRAM_D.p65 - Rev. D; Pub 1/02
48
Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2000, Micron Technology, Inc.
DataSheet 4 U .com
www..com
ADVANCE
512Mb: x4, x8, x16 SDRAM
WRITE - WITH AUTO PRECHARGE
T0 CLK tCKS CKE tCMS COMMAND tCMH
NOP WRITE NOP NOP NOP NOP NOP NOP ACTIVE
1
tCK tCKH
T1
tCL
T2 tCH
T3
T4
T5
T6
T7
T8
T9
ACTIVE
tCMS tCMH DQM/ DQML, DQMH tAS A0-A9, A11, A12 tAH
COLUMN m 2 ENABLE AUTO PRECHARGE ROW ROW
ROW
tAS A10
tAH
ROW
tAS BA0, BA1
tAH
BANK BANK
BANK
tDS DQ
tDH DIN m
tDS
tDH
tDS
tDH
tDS
tDH
DIN m + 1
DIN m + 2
DIN m + 3 tWR tRP
t4U.com
tRCD tRAS tRC
DataShee
.com
DON'T CARE
TIMING PARAMETERS
-7E MAX -75 MAX -7E MAX -75 MAX
SYMBOL* tAH tAS tCH
tCL tCK tCK
MIN 0.8 1.5 2.5 2.5 7 7.5 0.8 1.5 0.8
MIN 0.8 1.5 2.5 2.5 7.5 10 0.8 1.5 0.8
UNITS ns ns ns ns ns ns ns ns ns
SYMBOL* tCMS tDH tDS
tRAS tRC tRCD tRP tWR
MIN 1.5 0.8 1.5 37 60
MIN 1.5 0.8 1.5 44 66
UNITS ns ns ns ns ns ns ns -
120,000
120,000
(3) (2)
tCKH tCKS tCMH
15 15 1 CLK + 7ns
20 20 1 CLK + 7.5ns
*CAS latency indicated in parentheses. NOTE: 1. For this example, the burst length = 4. 2. x16: A11 and A12 = "Don't Care" x8: A12 = "Don't Care"
.com
512Mb: x4, x8, x16 SDRAM 512MSDRAM_D.p65 - Rev. D; Pub 1/02
49
Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2000, Micron Technology, Inc.
DataSheet 4 U .com
www..com
ADVANCE
512Mb: x4, x8, x16 SDRAM
SINGLE WRITE - WITHOUT AUTO PRECHARGE
T0 CLK tCKS CKE tCMS COMMAND tCMH
NOP WRITE NOP4 NOP4 PRECHARGE NOP ACTIVE NOP
1
T7 T8
tCK tCKH
T1
tCL
T2 tCH
T3
T4
T5
T6
ACTIVE
tCMS tCMH DQM/ DQML, DQMH tAS A0-A9, A11, A12 tAH
COLUMN m 3 ALL BANKS ROW DISABLE AUTO PRECHARGE BANK SINGLE BANK BANK BANK
ROW
tAS A10
tAH
ROW
tAS BA0, BA1
tAH
BANK
tDS
tDH DIN m
t4U.com
DQ tRCD tRAS tRC
t WR 2
tRP
DataShee
.com
DON'T CARE
TIMING PARAMETERS
-7E MAX -75 MAX -7E MAX -75 MAX
SYMBOL*
tAH tAS tCH tCL tCK tCK
MIN 0.8 1.5 2.5 2.5 7 7.5 0.8 1.5 0.8
MIN 0.8 1.5 2.5 2.5 7.5 10 0.8 1.5 0.8
UNITS ns ns ns ns ns ns ns ns ns
SYMBOL*
tCMS tDH tDS tRAS tRC tRCD tRP tWR
MIN 1.5 0.8 1.5 37 60 15 15 14
MIN 1.5 0.8
UNITS ns ns
120,000
(3)
1.5 44 66 20 20 15
120,000
ns ns ns ns ns ns
(2) tCKH
tCKS tCMH
*CAS latency indicated in parentheses. NOTE: 1. For this example, the burst length = 1, and the WRITE burst is followed by a "manual" PRECHARGE. 2. 14ns to 15ns is required between and the PRECHARGE command, regardless of frequency. 3. x16: A11 and A12 = "Don't Care" x8: A12 = "Don't Care" 4. PRECHARGE command not allowed else tRAS would be violated
.com
512Mb: x4, x8, x16 SDRAM 512MSDRAM_D.p65 - Rev. D; Pub 1/02
50
Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2000, Micron Technology, Inc.
DataSheet 4 U .com
www..com
ADVANCE
512Mb: x4, x8, x16 SDRAM
SINGLE WRITE - WITH AUTO PRECHARGE
T0 CLK tCKS CKE tCMS COMMAND tCMH
NOP4 NOP4 NOP4 WRITE NOP NOP NOP ACTIVE NOP
1
tCK tCKH
T1
tCL
T2 tCH
T3
T4
T5
T6
T7
T8
T9
ACTIVE
tCMS DQM/ DQML, DQMH tAS A0-A9, A11, A12 tAH
tCMH
ROW
COLUMN m3 ENABLE AUTO PRECHARGE
ROW
tAS A10
tAH
ROW
ROW
tAS BA0, BA1
tAH
BANK BANK
BANK
tDS DQ
tDH DIN m
t4U.com
tRCD3 tRAS tRC
tWR2
tRP
DataShee
.com
DON'T CARE
TIMING PARAMETERS
-7E MAX -75 MAX -7E MAX -75 MAX
SYMBOL*
tAH tAS tCH tCL tCK tCK
MIN 0.8 1.5 2.5
MIN 0.8 1.5 2.5 2.5 7.5 10 0.8 1.5 0.8
UNITS ns ns ns ns ns ns ns ns ns
SYMBOL*
tCMS tDH tDS tRAS tRC tRCD tRP tWR
MIN 1.5 0.8 1.5 37 60
MIN 1.5 0.8 1.5
UNITS ns ns ns
(3) (2)
2.5 7 7.5 0.8 1.5 0.8
120,000
44 66 20 20 1 CLK + 7ns
120,000
ns ns ns ns ns
tCKH tCKS tCMH
15 15 1 CLK + 7ns
*CAS latency indicated in parentheses.
NOTE: 1. For this example, the burst length = 1, and the WRITE burst is followed by a "manual" PRECHARGE. 2. 14ns to 15ns is required between and the PRECHARGE command, regardless of frequency. 3. x16: A11 and A12 = "Don't Care" x8: A12 = "Don't Care" 4. WRITE command not allowed else tRAS would be violated
.com
512Mb: x4, x8, x16 SDRAM 512MSDRAM_D.p65 - Rev. D; Pub 1/02
51
Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2000, Micron Technology, Inc.
DataSheet 4 U .com
www..com
ADVANCE
512Mb: x4, x8, x16 SDRAM
ALTERNATING BANK WRITE ACCESSES
T0 CLK tCKS CKE tCMS COMMAND tCMH
NOP WRITE NOP ACTIVE NOP WRITE NOP NOP ACTIVE
1
T7 T8 T9
tCK tCKH
T1
tCL
T2 tCH
T3
T4
T5
T6
ACTIVE
tCMS DQM/ DQML, DQMH tAS A0-A9, A11, A12 tAH
tCMH
ROW
COLUMN m 3
ROW
COLUMN b 3
ROW
tAS A10
tAH
ENABLE AUTO PRECHARGE ROW
ENABLE AUTO PRECHARGE ROW
ROW
tAS BA0, BA1
tAH
BANK 0 BANK 1 BANK 1 BANK 0
BANK 0
tDS DQ tRCD - BANK 0
tDH DIN m
tDS
tDH
tDS
tDH
tDS
tDH
tDS
tDH DIN b
tDS
tDH
tDS
tDH
tDS
tDH
DIN m + 1
DIN m + 2
DIN m + 3
DIN b + 1
DIN b + 2 tRP - BANK 0
DIN b + 3 tRCD - BANK 0
tWR - BANK 0
t4U.com
tRAS - BANK 0 tRC - BANK 0 tRRD RCD - BANK .com 1 t tWR - BANK 1
DataShee
DON'T CARE
TIMING PARAMETERS
-7E MAX -75 MAX -7E UNITS ns ns ns ns ns ns ns ns ns SYMBOL* tCMS
tDH tDS tRAS tRC tRCD tRP tRRD tWR
-75 MIN 1.5 0.8 1.5 44 66 20 20 15 Note 2 MAX UNITS ns ns ns ns ns ns ns ns ns
SYMBOL* tAH tAS
tCH tCL tCK
MIN 0.8 1.5 2.5 2.5 7 7.5 0.8 1.5 0.8
MIN 0.8 1.5 2.5 2.5 7.5 10 0.8 1.5 0.8
MIN 1.5 0.8 1.5 37 60 15 15 14 Note 2
MAX
120,000
120,000
(3) tCK (2) tCKH
tCKS tCMH
*CAS latency indicated in parentheses. NOTE: 1. For this example, the burst length = 4. 2. Requires one clock plus time (7ns to 7.5ns) with auto precharge or 14ns to 15ns with PRECHARGE. 3. x16: A11 and A12 = "Don't Care" x8: A12 = "Don't Care"
.com
512Mb: x4, x8, x16 SDRAM 512MSDRAM_D.p65 - Rev. D; Pub 1/02
52
Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2000, Micron Technology, Inc.
DataSheet 4 U .com
www..com
ADVANCE
512Mb: x4, x8, x16 SDRAM
WRITE - FULL-PAGE BURST
T0 CLK tCKS CKE tCMS COMMAND tCMH
NOP WRITE NOP NOP NOP
T1 tCL tCH tCKH tCK
T2
T3
T4
T5
(( )) (( ))
Tn + 1
Tn + 2
Tn + 3
(( )) (( )) (( )) (( ))
ACTIVE
NOP
BURST TERM
NOP
tCMS tCMH DQM/ DQML, DQMH tAS A0-A9, A11, A12 tAH
COLUMN m 1
(( )) (( ))
ROW
(( )) (( ))
tAS A10
tAH
ROW
(( )) (( ))
t4U.com
tAS BA0, BA1
tAH
BANK
BANK
.com
tDS DQ tRCD tDH DIN m tDS tDH tDS tDH tDS tDH DIN m + 1 DIN m + 2 DIN m + 3
(( )) (( ))
DataShee
tDS tDH
(( )) (( ))
DIN m - 1 Full-page burst does not self-terminate. Can use BURST TERMINATE command to stop.2, 3
1,024 (x16) locations within same row 2,048 (x8) locations within same row 4,096 (x4) locations within same row
Full page completed
DON'T CARE
TIMING PARAMETERS
-7E MAX -75 MAX -7E MAX -75 MAX
SYMBOL* tAH
tAS tCH tCL tCK
MIN 0.8 1.5 2.5 2.5 7 7.5 0.8
MIN 0.8 1.5 2.5 2.5 7.5 10 0.8
UNITS ns ns ns ns ns ns ns
SYMBOL* tCKS
tCMH tCMS tDH tDS tRCD
MIN 1.5 0.8 1.5 0.8 1.5 15
MIN 1.5 0.8 1.5 0.8 1.5 20
UNITS ns ns ns ns ns ns
(3) tCK (2)
tCKH
*CAS latency indicated in parentheses. NOTE: 1. x16: A11 and A12 = "Don't Care" x8: A12 = "Don't Care" 2. tWR must be satisfied prior to PRECHARGE command. 3. Page left open; no tRP.
.com
512Mb: x4, x8, x16 SDRAM 512MSDRAM_D.p65 - Rev. D; Pub 1/02
53
Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2000, Micron Technology, Inc.
DataSheet 4 U .com
www..com
ADVANCE
512Mb: x4, x8, x16 SDRAM
WRITE - DQM OPERATION
T0 CLK tCKS CKE tCMS COMMAND tCMH
NOP WRITE NOP NOP NOP NOP NOP
1
T5 T6 T7
T1 tCK tCKH tCL
T2 tCH
T3
T4
ACTIVE
tCMS tCMH DQM/ DQML, DQMH tAS A0-A9, A11, A12 tAH
COLUMN m 2 ENABLE AUTO PRECHARGE
ROW
tAS A10
tAH
ROW
tAS BA0, BA1
tAH
DISABLE AUTO PRECHARGE BANK
BANK
t4U.com
tDS DQ tRCD
tDH
DIN m
tDS
tDH
tDS
tDH
DIN m + 2
DIN m + 3
DataShee
.com
DON'T CARE
TIMING PARAMETERS
-7E SYMBOL*
tAH tAS tCH tCL tCK
-75 MIN 0.8 1.5 2.5 2.5 7.5 10 0.8 MAX UNITS ns ns ns ns ns ns ns SYMBOL*
tCKS tCMH tCMS tDH tDS tRCD
-7E MIN 1.5 0.8 1.5 0.8 1.5 15 MAX MIN 1.5 0.8 1.5 0.8 1.5 20
-75 MAX UNITS ns ns ns ns ns ns
MIN 0.8 1.5 2.5 2.5 7 7.5 0.8
MAX
(3) tCK (2)
tCKH
*CAS latency indicated in parentheses. NOTE: 1. For this example, the burst length = 4. 2. x16: A11 and A12 = "Don't Care" x8: A12 = "Don't Care"
.com
512Mb: x4, x8, x16 SDRAM 512MSDRAM_D.p65 - Rev. D; Pub 1/02
54
Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2000, Micron Technology, Inc.
DataSheet 4 U .com
www..com
ADVANCE
512Mb: x4, x8, x16 SDRAM
54-PIN PLASTIC TSOP (400 mil)
22.22 0.08 .80 TYP 0.375 0.075 0.71 SEE DETAIL A
11.76 0.10 10.16 0.08
PIN #1 ID
0.15 +0.03 -0.02
GAGE PLANE 0.25
t4U.com
0.10 1.2 MAX
.com
0.10 +0.10 -0.05 0.50 0.10 0.80 TYP DETAIL A
NOTE: 1. All dimensions in millimeters. 2. Package width and length do not include mold protrusion; allowable mold protrusion is 0.25mm per side.
8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900
E-mail: prodmktg@micron.com, Internet: http://www.micron.com, Customer Comment Line: 800-932-4992 Micron is a registered trademark and the Micron logo and M logo are trademarks of Micron Technology, Inc.
.com
512Mb: x4, x8, x16 SDRAM 512MSDRAM_D.p65 - Rev. D; Pub 1/02
55
Micron Technology, Inc., reserves the right to change products or specifications without notice. (c)2000, Micron Technology, Inc.
DataSheet 4 U .com

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